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Quantitative Measurement of Interface Fracture Energy in Multi-Layer Thin Film Structures

Published online by Cambridge University Press:  15 February 2011

Qing Ma ,
Harry Fujimoto ,
Paul Flinn ,
Vivek Jain ,
Farshid Adibi-Rizi ,
Farhad Moghadam  and
Reinhold H. Dauskardt
Qing Ma
Affiliation:
Intel Corporation, Santa Clara, CA 95054
Harry Fujimoto
Affiliation:
Intel Corporation, Santa Clara, CA 95054
Paul Flinn
Affiliation:
Intel Corporation, Santa Clara, CA 95054
Vivek Jain
Affiliation:
Intel Corporation, Santa Clara, CA 95054
Farshid Adibi-Rizi
Affiliation:
Intel Corporation, Santa Clara, CA 95054
Farhad Moghadam
Affiliation:
Intel Corporation, Santa Clara, CA 95054
Reinhold H. Dauskardt
Affiliation:
Stanford University, Stanford, CA 94305
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Abstract

Interfacial debonding of multi-layer thin film systems can severely affect the reliability of devices. To quantitatively evaluate the interface adhesion strength, a sandwich structure four-point bending technique was developed. In the sandwich structure samples, the thin film structure of interest was diffusion bonded between two silicon substrates. A fourpoint bending method was applied to propagate a crack along the interface of interest. Two thin film systems with nominally the same structure, but processed under different conditions, were measured for their SiO2/TiN interface fracture energies. Results showed that the interface fracture energy of one system was about 50% larger than that of the other system. Cross-section TEM observations revealed that the stronger interface was also significantly rougher.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 91
Copyright
Copyright © Materials Research Society 1995

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References

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