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Properties of the Heteroepitaxial AIN/SiC Interface

Published online by Cambridge University Press:  21 February 2011

M. C. Benjamin ,
C. Wang ,
R. S. Kern ,
R. F. Davis  and
R. J. Nemanich
M. C. Benjamin
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
C. Wang
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
R. S. Kern
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
R. F. Davis
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
R. J. Nemanich
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

This study presents the results of surface investigation of the heteroepitaxial AIN/SiC interface. The analytical tools employed included UPS, XPS, Auger spectroscopy, and LEED. The surface electronic states were characterized by uv photoemission obtained at surface normal. Conclusions drawn from this study are that the AIN/SiC structure results in a negative electron affinity surface which is extremely sensitive to defect density. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 81
Copyright
Copyright © Materials Research Society 1994

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References

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