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Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperatures

Published online by Cambridge University Press:  01 February 2011

Shinsuke Miyajima ,
Akira Yamada  and
Makoto Konagai
Shinsuke Miyajima
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9,O-okayama, Meguro-ku, Tokyo, N/A, 152-8552, Japan, +81-3-5734-2662, +81-3-5734-2897
Akira Yamada
Affiliation:
[email protected], Tokyo Institute of Technology, Quantum Nanoelectronics Research Center, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, N/A, 152-8552, Japan
Makoto Konagai
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, N/A, 152-8552, Japan
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Abstract

We have investigated properties of nanocrystalline hydrogenated cubic silicon carbide (nc-3C-SiC:H) and silicon carbide: germanium alloy (nc-SiC:Ge:H) films deposited by hot-wire chemical vapor deposition (HWCVD) at low temperatures of about 300°C. we found that the density of charged defects was strongly influenced by grain size of the films. In-situ doping into nc-3C-SiC:H films was also carried out. N-type nc-3C-SiC:H films were successfully deposited by using phosphine (PH3) and hexamethyldisilazane (HMDS) as dopants. We found that HMDS is an effective n-type dopant for low temperature deposition of nc-3C-SiC:H films by HWCVD. For the deposition of p-type nc-3C-SiC:H with trimethylaluminum (TMA), it was found that the substrate temperature of above 300°C is required to activate the acceptors. We added dimethylgermane (DMG) into mixture of MMS and H2 to prepare nc-SiC:Ge:H films. The nc-SiC:Ge:H films with Ge mole fraction of 1.9% were successfully deposited.

Keywords

chemical vapor deposition (CVD) (deposition)crystal growthalloy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A04-01
Copyright
Copyright © Materials Research Society 2006

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References

1. Morkoc, H., Strite, S., Gao, G.B., Lin, M.E., Sverdlov, B. and Bums, M., J. Appl. Phys. 76, 1363 (1994).Google Scholar
2. Bimberg, D., Altarelli, M., Lipari, N.O. Solid State Commun., 40, 437 (1981).Google Scholar
3. Motoyama, S., Kaneda, S., Appl. Phys. Lett. 54, 242 (1989).Google Scholar
4. Kerdiles, S., Berthelot, A., Gourbilleau, F., and Rizk, R., Appl. Phys. Leet 76, 2373 (2000).Google Scholar
5. Rajagopalan, T., Wang, X., Lahlouh, B., Ramkumar, C., P. Dutta and Gangopadhyay, S., J. Appl. Phys. 94, 5252 (2003).Google Scholar
6. Miyajima, S., Yamada, A. and Konagai, M., Proc. 3rd World Conf. Photovoltaic Energy Conversion, Osaka 5P-A9-24 (2003).Google Scholar
7. Miyajima, S., Yamada, A. and Konagai, M., Jpn. J. Appl. Phys. 43 L1190 (2004).Google Scholar
8. Klein, S., Carius, R., Houben, L. and Finger, F., MRS Proceedings 862, 145 (2005).Google Scholar
9. Miyajima, S., Yamada, A. and Konagai, M., Thin Solid Films 501, 186 (2006).Google Scholar
10. Miyajima, S., Yamada, A. and Konagai, M., MRS Proceedings 862, 287 (2005).Google Scholar
11. Miyajima, S., Yamada, A. and Konagai, M., Jpn. J. Appl Phys. 45, L432 (2006).Google Scholar
12. Roe, K., Dashiell, M., Xuan, G., Ansorge, E., Katulka, G., Sustersic, N., Zhang, X. and Kolodzey, J., Proc. of IEEE Lester Eastman Conference on High Performance Devices, University of Delaware 201 (2002).Google Scholar
13. Kouvetakis, J., Todd, M., Chandrasekhar, D. and Smith, J., Appl. Phys. Lett. 65, 2960 (1994).Google Scholar
14. Patrick, L., Choyke, W.J.: Phys. Rev. 186, 775 (1969).Google Scholar
15. Shaffer, P.T.B, Naum, R.G., J. Opt. Soc. Am. 59, 1498 (1969).Google Scholar
16. Werner, J.H., Dassow, R., Rinke, T.J., Kohler, J.R. and Bergmann, R.B., Thin Solid Films 383, 95 (2001)Google Scholar