Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T01:54:15.469Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties Of High Dose Low Temperature Rapid Thermally Annealed Gallium Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

Y.H. Lee ,
H.B. Harrison ,
A.P. Pogany  and
G.L. Olson
Y.H. Lee
Affiliation:
Microelectronics Technology Centre, RMIT, 124 LaTrobe St., Melbourne, 3000, Australia.
H.B. Harrison
Affiliation:
Microelectronics Technology Centre, RMIT, 124 LaTrobe St., Melbourne, 3000, Australia.
A.P. Pogany
Affiliation:
Microelectronics Technology Centre, RMIT, 124 LaTrobe St., Melbourne, 3000, Australia.
G.L. Olson
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu, California 90265, U.S.A.
Get access

Abstract

High doses: 1, 3 and 6×1015/cm2 of Ga71+ ions were implanted into <100> silicon at 100keV and annealed in the temperature regime of 550-675° C for seconds to tens of seconds. Two different annealing rigs were used; however the physical and electrical results obtained from each provided remarkably similar results.

We have observed a regrowth rate/dose dependency through both our physical and electrical measurements that provide surprisingly good correlation. We also note that for the highest dose complete solid phase epitaxial regrowth is inhibited, and for temperatures as low as 640°C and times as short as 9sec. onset of movement of the gallium toward the surface is observed. We also show that extremely high free carrier concentrations of gallium can be obtained under the correct anneal conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 21
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See for example various papers from Energy Beam - Solid Interaction and Transient Thermal Processing, Edited by Fan, J.C.C., Johnson, N.M. (North-Holland Publishers, New York, (1984).Google Scholar
2. Energy Beam - Solid Interactions and Transient Thermal Processing Edited by Biegelsen, D.K., Rozgonyi, G.A. and Shank, C.V. (MRS Publication Pittsburgh 1985).Google Scholar
3. Tsai, M.Y., Streetman, B.G., Deline, V.R. and Evans, C.A. Jr., J. of Elec. Materials 8, (2), (1979).Google Scholar
4. Elliman, R.G. and Carter, G.L., Nucl. Inst. and Meth. 209–210 (1981).Google Scholar
5. Arora, B.M., Castillo, J.M., Kurup, M.B. and Sharma, R.P., Rad. Effects, 63, 1982.Google Scholar
6. Harrison, H.B., Lee, Y.H., Sai-Halasz, G.A., Iyer, S.S., in Materials Issues in Silicon Integrated Circuit Processing Eds. Wittmer, M., Stimmell, J., Strathman, M. (MRS publication Pittsburgh, P.A. 1986).Google Scholar
7. Harrison, H.B., Grigg, M., Short, K.T., Williams, J.S. and Zylewicz, A. in Laser and Electron Beam Processing of Materials Edited by Appleton, B.R. and Celler, G.K. (Elsevier - North Holland, N.Y. 1982).Google Scholar
8. Olson, G.L., in Energy Beam - Solid Interactions and Transient Thermal Processing edited by Biegelsen, D.K., Rozgonyi, G.A. and Shank, C.V. (Elsevier North Holland New York 1984).Google Scholar
9. Williams, J.S. and Elliman, R.G. Nucl. Inst. and Meth. 183 (1981).Google Scholar
10. Harrison, H.B., Sai-Halasz, G.A., Cohen, S.A. and Iyer, S.S., Submitted to Appl. Phys. Lett.Google Scholar