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Properties of Gate-Quality SiO2 Films Prepared by Electron Cyclotron Resonance Chemical Vapour Deposition in an Ultrahigh Vacuum Processing System

Published online by Cambridge University Press:  15 February 2011

Y. Tao ,
D. Landheer ,
J. E. Hulse ,
D.-X. Xu  and
T. Quance
Y. Tao
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada, KIA 0R6
D. Landheer
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada, KIA 0R6
J. E. Hulse
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada, KIA 0R6
D.-X. Xu
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada, KIA 0R6
T. Quance
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada, KIA 0R6
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Abstract

We have prepared thin SiO2 layers on Si(100) wafers by electron cyclotron resonance chemical vapour deposition (ECR-CVD) in a multi-chamber ultra-high vacuum (UHV) processing system. The oxides were characterized in-situ by single wavelength ellipsometry (SWE) and x-ray photoelectron spectroscopy (XPS) and ex-situ by Fourier transform infra-red spectroscopy (FTIR), spectroscopic ellipsometry (SE) and capacitance-voltage (CV) electrical measurements. Films deposited at higher pressures, low powers and low silane flow rates had excellent physical and electrical properties. Films deposited at 400 °C had better physical properties than those of thermal oxides grown in dry oxygen at 700 °C. A 1 minute anneal at 950 °C reduced the fast interface state density from 1.2×1011 to 7×1010 eV−1cm−2

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 255
Copyright
Copyright © Materials Research Society 1995

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References

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