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Properties of Cu3Ge Films for Contacts to Si and SiGe and Cu Metallization

Published online by Cambridge University Press:  10 February 2011

Mark A. Borek ,
S. Oktyabrsky ,
M. O. Aboelfotoh  and
J. Narayan
Mark A. Borek
Affiliation:
Department of Materials Science and Engineering, N.C. State University, Raleigh, N.C. 27695
S. Oktyabrsky
Affiliation:
Department of Materials Science and Engineering, N.C. State University, Raleigh, N.C. 27695
M. O. Aboelfotoh
Affiliation:
Department of Materials Science and Engineering, N.C. State University, Raleigh, N.C. 27695
J. Narayan
Affiliation:
Department of Materials Science and Engineering, N.C. State University, Raleigh, N.C. 27695
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Abstract

We have formed thin films of Cu3Ge on (100) Si and (100) Si50Ge50 for low resistivity ohmic contacts and interconnects by the sequential room temperature e-beam deposition of a layer of amorphous Ge, followed by a polycrystalline layer of Cu. We have also deposited thin films of Cu on the Si50Ge50 to compare the behavior of films of Cu3Ge relative to that of pure Cu. We have determined by transmission electron microscopy (TEM) that films of Cu3Ge form an abrupt interface with Si and Si50Ge50, with no indication of interaction between the film and substrate. We have also shown by secondary ion mass spectrometry (SIMS) that Cu diffusion into the underlying substrate is not observed for films of Cu3Ge as compared to that of pure Cu. We have shown that Cu reacts with Si50Ge50 when annealed or 30 min. at 400°C to form a layer of Cu3Si1−xGe.. We have also observed that room temperature oxidation of the underlying Si50Ge50 does not occur as compared to the room temperature formation of SiO2 that is observed in Cu3Si/Si structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 269
Copyright
Copyright © Materials Research Society 1998

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References

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