Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T15:50:17.092Z Has data issue: false hasContentIssue false
  • English
  • Français

Principles and Applications of Metalorganic Chemical Vapor Deposition for the Growth of ih-V Compounds on Si Substrates

Published online by Cambridge University Press:  28 February 2011

Russell D. Dupuis
Russell D. Dupuis*
Affiliation:
At&t Bell Laboratories, Murray Hill, New Jersey 07974–2070
Get access

Abstract

The use of the metalorganic chemical vapor deposition thin film materials technology in the heteroepitaxial growth of GaAs on Si substrates is of increasing interest for a wide variety of applications. This paper will describe the principles and applications of this materials technology and discuss possible future approaches to the growth of high-quality HI-V heteroepitaxial layers on Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 15
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ota, Y., J. Electrochem. Soc. 124, 1795 (1977).CrossRefGoogle Scholar
[2] Ishizaka, A., Nakagawa, K. and Shiraki, Y., in Proceedings of the Second InternationalConference on Molecular Beam Epitaxy and Related Clean Surface Techniques (Japan. Soc. Appl. Phys., Tokyo,. 1982), p. 183.Google Scholar
[3] Uppal, P. N. and Kroemer, H., J. Appl. Phys. 58, 2195 (1985).Google Scholar
[4] Akiyama, M., Kawarda, Y. and Kaminishi, K., Jap. J. Appl. Phys., 23, L843 (1984).Google Scholar
[5] Shastry, S. K., Zemon, S. and Oren, M., in J. Cryst. Growth 77, 503 (1986).Google Scholar
[6] Akiyama, M., Kawarda, Y., Ueda, T., Nishi, S. and Kaminishi, K., J. Crystal Growth 77, 490 (1986).Google Scholar
[7] Soga, T., Hattori, S., Sakai, S. and Umeno, M., J. Crystal Growth 77, 498 (1986).Google Scholar
[8] Kroemer, H. in Heteroepitaxy on Silicon edited by Fan, J. C. C. and Poate, J. M. (Mat. Res. Soc., Pittsburgh, 1986), p. 3. See also J. S. Harris, S. M. Koch and S. J. Rosener in Heteroepitaxy on Silicon II, edited by J. C. C. Fan, J. M. Philips and B. Y. Tsaur (Mat. Res. Soc., Pittsburgh, 1987), p. 3.Google Scholar
[9] Kaplan, R., Surf. Sci. 93, 145 (1980).Google Scholar
[10] Sakamoto, T. and Hashiguchi, G., Jap. J. Appl. Phys. 25, L57 (1986).Google Scholar
[11] Aspnes, D. and Ihm, J. in Heteroepitaxy on Silicon II, edited by Fan, J. C. C., Philips, J. M. and Tsaur, B. Y. (Mat. Res. Soc., Pittsburgh, 1987), p. 45.Google Scholar
[12] Hull, R. and Fischer-Colbrie, A., Appl. Phys. Lett. 50, 851 (1987).Google Scholar
[13] Bringans, R. D., Olmstead, M. A., Uhrberg, R. I. G. and Bachrach, R. Z., Appl. Phys. Lett. 51, 523 (1987).Google Scholar
[14] Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S. M. and Harris, J. S., Appl. Phys. Lett. 51, 1723 (1987).Google Scholar
[15] Blakeslee, A. E., J. Electrochem. Soc. 118, 1459 (1970).Google Scholar
[16] Matthews, J. W. and Blakeslee, A. E., Thin Solid Films 33, 253 (1976).Google Scholar
[17] Hattori, Soga S., Sakai, S., Takeyasu, M and Umeno, M., Electron. Lett. 20, 916 (1984).Google Scholar
[18] Soga, T., Sakai, S., Takeyasu, M., Umeno, M. and Hattori, S. in GaAs and Related Compounds 1985, Ed. Fujimoto, M., (Inst. of Physics, Bristol,(1986), p. 133.Google Scholar
[19] Fischer, R., Neuman, D., Zabel, H. and Morkoc, H., Appl. Phys. Lett. 48, 1223 (1986).CrossRefGoogle Scholar
[20] Fischer, R., Morkoc, H., Newmann, D. A., Zabel, H., Choi, C., Otsuka, N., Longerbone, M. and Erickson, L. P., J. Appl. Phys. 60, 1640 (1986).Google Scholar
[21] Ziel, J. P. van der, Dupuis, R. D. and Bean, J. C., Appl. Phys. Lett. 48, 1713 (1986).Google Scholar
[22] Dupuis, R. D., Bean, J. C., Brown, J. M., Macrander, A. T., Miller, R. C. and Hopkins, L. C., J. Electron. Mat. 16, 69 (1987).Google Scholar
[23] El-Masry, N., Tam, J. C. L., Humphreys, T. P., Hamaguchi, N., Karam, N. H. and Bedair, S. M., Appl. Phys. Lett. 51, 1608 (1987).Google Scholar
[24] El-Masry, N., Hamaguchi, N., Tam, J. C. L., Karam, N., Humphreys, T. P., Moore, D. and Bedair, S. M., in Heterostructures on Si II, edited by Fan, J. C. C., Philips, J. M. and Tsaur, B. Y. (Mat. Res. Soc., Pittsburgh, 1987), p. 99.Google Scholar
[25] Shaw, D., in Heteroepitaxy on Silicon II, edited by Fan, J. C. C., Philips, J. M. and Tsaur, B. Y. (Mat. Res. Soc., Pittsburgh, 1987), p. 15.Google Scholar
[26] Shastry, S. K., Zemon, S. and Oren, M., J. Cryst. Growth 77, 503 (1986).Google Scholar
[27] Vernon, S. M., Haven, V. E., Tobin, S. P. and Wolfson, R. G., J. Cryst. Growth 77, 530 (1986).Google Scholar
[28] Windhorn, T. H., Metze, G. M., Tsaur, B.-Y. and Fan, J. C. C., Appl. Phys. Lett. 45, 309 (1984).Google Scholar
[29] Windhorn, T. H. and Metze, G. M., Appl. Phys. Lett. 47, 1031 (1985).Google Scholar
[30] Sakai, S., Soga, T., Takeyasu, M. and Umeno, M., Japan. J. Appl. Phys. 24, L666 (1985).Google Scholar
[31] Sakai, S., Soga, T., Takeyasu, M. and Umeno, M., Appl. Phys. Lett. 48, 413 (1986).Google Scholar
[32] Dupuis, R. D., Ziel, J. P. van der, Logan, R. A., Brown, J. M., and Pinzone, C. J., Appl. Phys. Lett. 50, 407 (1987).Google Scholar
[33] Ziel, J. P. van der, Dupuis, R. D., Logan, R. A. and Pinzone, C. J., Appl. Phys. Len. 51, 89 (1987).Google Scholar
[34] Deppe, D. G., Holonyak, N. Jr., Nam, D. W., Hsieh, K. C., Jackson, G. S., Matyi, R. J., Shichijo, H., Epler, J. E. and Chung, H. F. Appl. Phys. Lett. 51, 637 (1987).CrossRefGoogle Scholar
[35] The MBE growth of GaAs/Si is described by Lee, J. W. in GaAs and Related Compounds 1986, edited by Lindley, W. T. (Inst. of Physics, Bristol, 1987), p. 111.Google Scholar
[36] Burnham, R. D., Streifer, W., Paoli, T. L. and Holonyak, N. Jr., I. Crystal Growth 68, 370 (1984).Google Scholar
[37] Deppe, D. G., Nam, D. W., Holonyak, N. Jr., Hsieh, K. C., Matyi, R. J., Shichijo, H., Epler, J. E., and Chung, H. F., Appl. Phys. Lett. 51, 1271 (1987).Google Scholar
[38] Chen, H. Z., Ghaffari, A., Wang, H., Morkoc, H. and Yariv, A., Appl. Phys. Lett. 51, 1320 (1987).Google Scholar
[39] Zemon, S., Shastry, S. K., Norris, P., Jagannath, C. and Lambert, G., Solid State Comm. 58, 457 (1986).CrossRefGoogle Scholar
[40] Wilson, B. A., Bonner, C. E., Miller, R. C., Sputz, S. K., Harris, T. D., Lamont, M. G., Dupuis, R. D., Vernon, S. M., Haven, V. E., Lum, R. M. and Klingert, J. K., J. Electron. Mat. 17, 115 (1988).Google Scholar
[41] Soga, T., Imori, T. and Umeno, M. in Heteroepitaxy on Si II, edited by Fan, J. C. C., Philips, J. M. and Tsaur, B. Y. (Mat. Res. Soc., Pittsburgh, 1987), p. 69.Google Scholar
[42] Hartman, R. L. and Hartman, A. R., Appl. Phys. Lett. 23, 147 (1973).Google Scholar
[43] Goodwin, A. R., Kirkby, P. A., Davies, I. G. A. and Baulcomb, R. S., Appl. Phys. Lett. 34, 647 (1979).Google Scholar
[44] Casey, H. C. and Panish, M. B., HeterostructureLasers, Part B, Materials and Operating Characteristics (Academic Press, New York, 1978), p. 300.Google Scholar
[45] Fletcher, R. M., Wagner, D. K. and Ballantyne, J. M., Appl. Phys. Lett. 44, 967 (1984).CrossRefGoogle Scholar
[46] Yao, Y., Okada, Y., Kawanami, H., Matsui, S., Imagawa, A. and Ishida, K. in Heteroepitaxy on Si II, edited by Fan, J. C. C., Philips, J. M. and Tsaur, B. Y. (Mat. Res. Soc., Pittsburgh, 1987), p. 63.Google Scholar
[47] Feder, R. and Light, T., J. Appl. Phys. 39, 4870 (1968). See also Properties of Gallium Arsenide (INSPEC, London, 1986), Section 1.7.Google Scholar
[48] Golecki, I. in Comparison of Thin Film Transistor and SO1 Technologies, edited by Lam, H. W. and Thompson, M. J. (North Holland/Elsevier Science Publishing Co., New York, 1984), p. 3.Google Scholar
[49] Runyan, W. R., Silicon Semiconductor Technology (McGraw-Hill, New York, 1965), p. 219.Google Scholar
[50] Thompson, G. B. H., Physics of Semiconductor Laser Devices (John Wiley & Sons, Chichester, 1980), p. 28.Google Scholar
[51] Havashi, I.. Jap. J. Appl. Phys. Suppl. 19-1 19, 23 (1980).Google Scholar