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Pre-Oxidation Anneal Kinetics: Interface Degradation of Thin SIO2 Films on Silicon

Published online by Cambridge University Press:  25 February 2011

J.C. Poler  and
E.A. Irene
J.C. Poler
Affiliation:
Dept. of Chemistry, University of North Carolina, Chapel Hill, NC 27599-3290
E.A. Irene
Affiliation:
Dept. of Chemistry, University of North Carolina, Chapel Hill, NC 27599-3290
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Abstract

The high temperature anneal of hydrogen terminated silicon has been shown to etch and roughen its surface. We attempt to describe the degree of this roughness and the time scale on which it occurs using several electrical measurements: excess direct tunneling currents, dielectric breakdown and the oscillations in the Fowler-Nordheim tunneling currents. From these results we draw conclusions on the time and water content dependence of pre-oxidation annealing on the microroughness of the Si/SiO2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 93
Copyright
Copyright © Materials Research Society 1992

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References

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