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Post-annealing Induced Formation of ZnO Nanowires on the ZnO Films in the N2O Ambient

Published online by Cambridge University Press:  01 February 2011

Ping-Yuan Lin ,
Wei-Tsai Liao ,
Kuo-Yi Yan ,
Chia-Chi Chang ,
Hsin-Yuen Lin ,
Cheng-Liang Wang ,
Jyh-Rong Gong ,
Dong-Yuan Lyu ,
Jian-Hao Lin  and
Tai-Yuan Lin
...Show all authors
Ping-Yuan Lin
Affiliation:
[email protected], National Chung Hsing University, Department of Physics, 250 Kuo-Kuang Rd., Taichung City, 402, Taiwan
Wei-Tsai Liao
Affiliation:
[email protected], National Chung Hsing University, Department of Physics, 250 Kuo-Kuang Rd., Taichung City, 402, Taiwan
Kuo-Yi Yan
Affiliation:
[email protected], National Chung Hsing University, Department of Physics, 250 Kuo-Kuang Rd., Taichung City, 402, Taiwan
Chia-Chi Chang
Affiliation:
[email protected], National Chung Hsing University, Department of Physics, 250 Kuo-Kuang Rd., Taichung City, 402, Taiwan
Hsin-Yuen Lin
Affiliation:
[email protected], National Chung Hsing University, Department of Physics, 250 Kuo-Kuang Rd., Taichung City, 402, Taiwan
Cheng-Liang Wang
Affiliation:
[email protected], National Chung Hsing University, Department of Physics, 250 Kuo-Kuang Rd., Taichung City, 402, Taiwan
Jyh-Rong Gong
Affiliation:
[email protected], National Chung Hsing University, Department of Physics, 250 Kuo-Kuang Rd., Taichung City, 402, Taiwan
Dong-Yuan Lyu
Affiliation:
[email protected], National Taiwan Ocean University, Institute of Optoelectronic Sciences, Keelung, 222, Taiwan
Jian-Hao Lin
Affiliation:
[email protected], National Taiwan Ocean University, Institute of Optoelectronic Sciences, Keelung, 222, Taiwan
Tai-Yuan Lin
Affiliation:
[email protected], National Taiwan Ocean University, Institute of Optoelectronic Sciences, Keelung, 222, Taiwan
Hung-Ji Lin
Affiliation:
[email protected], National Changhua University of Education, Department of Electronic Engineering, Changhua, 500, Taiwan
Der-Yuh Lin
Affiliation:
[email protected], National Changhua University of Education, Department of Electronic Engin eering, Changhua, 500, Taiwan
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Abstract

ZnO films were grown on (0001) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DeZn) and nitrous oxide (N2O) in an inductively heated reactor operated at atmospheric pressure. Low-temperature (LT) ZnO buffer layers having various thicknesses were deposited at 400¢J followed by subsequent growth of ZnO films at 600¢J. Some of the ZnO films were then post-annealed at 1000¢J in the N2O flow. Under certain growth conditions, ZnO nanowires were formed on the post-annealed ZnO samples. Room temperature (RT) photoluminescence (PL) spectra of the ZnO nanowires show strong ultraviolet (UV) near band edge emissions at 3.27 eV with a typical full width at half-maximum ( FWHM ) of ~130 meV and quenched defect luminescence at 2.8 eV. 10 K PL spectra of the post-annealed ZnO all exhibit sharp excitonic emissions with the dominant emission being located at 3.36 eV having a FWHM of 4.6 meV.

Keywords

nanostructureoxideatomic layer deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1017 , 2007 , 1017-DD16-06
Copyright
Copyright © Materials Research Society 2007

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References

[1] Mang, A., Reimann, K. and Rübenacke, St., Solid state Commun. 94 (1995) 251.Google Scholar
[2] Dayan, N.J., Sainkar, S.R., Karekar, R.N., Aiyer, R.C., Thin Solid Films 325(1998) 254.Google Scholar
[3] Yang, Z.K., Wong, G.K.L., Yu, P., Kawasaki, M., Otono, A., Koinuma, H., Segawa, Y., Appl. Phys. Lett. 72 (1998) 3270.Google Scholar
[4] Wang, X., Li, Q., Liu, Z., Zhang, J., Liu, Z. and Wang, R., Appl. Phys. Lett. 84 (2004) 4941.Google Scholar
[5] Kouklin, N. and Sen, S., Appl. Phys. Lett. 89 (2006) 123114.Google Scholar
[6] Xiang, B., Wang, P., Zhang, X., Dayeh, S. A., Aplin, D. P. R., Soci, C., Yu, D. and Wang, D., Nano Lett. 7(2007) 323.Google Scholar
[7] Luo, L., Zhangj, Y., Mao, S. S., Lin, L., Sensors and Actuators A 127(2006) 201.Google Scholar
[8] Soci, C., Zhang, A., Dayeh, S. A., Aplin, D. P. R., Park, J., Bao, X. Y., Lo, T. H. and Wang, D., Nano Lett. 7(2007) 1003.Google Scholar