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Positron Annihilation and X-Ray Photoelectron Spectroscopy Analyses of TiN/Si and TiN/SiO2/Si Films

Published online by Cambridge University Press:  22 February 2011

A. K. Issar ,
S. C. Sharma ,
A. R. Chourasia  and
D. R. Chopra
A. K. Issar
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, Texas 76019
S. C. Sharma
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, Texas 76019
A. R. Chourasia
Affiliation:
Department of Physics, East Texas State University, Commerce, Texas 75429
D. R. Chopra
Affiliation:
Department of Physics, East Texas State University, Commerce, Texas 75429
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Abstract

We have characterized TiN/Si and TiN/SiO2/Si structures by utilizing the variable energy positron beam spectroscopy (VEPBS) and x-ray photoelectron spectroscopy (XPS). Thin films of TiN were grown on SiO2/Si and Si by chemical vapor deposition and sputtering. Details of the electronic structure, microstructural defects, and interface are probed by implanting monoenergetic positrons at varying depths and analyzing the resulting positron-electron annihilation gamma rays. This analysis provides results for the positron diffusion length in different parts of the layered structure. Being sensitive to the presence of lattice defects, the positron diffusion length can be used to assess the quality of the film. The XPS measurements provide details about the elemental composition and interface in these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 143
Copyright
Copyright © Materials Research Society 1994

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References

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