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Plasma Etching of Copper Films Using IR Light Irradiation

Published online by Cambridge University Press:  25 February 2011

N. Hosoi  and
Y. Ohshita
N. Hosoi
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, lbaraki 305,Japan
Y. Ohshita
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, lbaraki 305,Japan
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Abstract

Copper films are etched at a low temperature of 60 °C using a Cl2 plasma etching method with IR light irradiation. The etch rate is as high as 1 μm/min. The anisotropic Cu line patterns are obtained independent of the Cl2 gas flow rate and the etching pressure conditions. Moreover, there is no corrosion on the etched sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 201
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Schwartz, G. C. and Schaible, P. M., J. Elctrochem. Soc. 130, 1777 (1983)CrossRefGoogle Scholar
2 Ohno, K., Sato, M., and Arita, Y., Jpn. J. Appl. Phys. 28, L1070 (1989)Google Scholar
3 Howard, B. J. and Steinbrüchel, Ch., Appl. Phys. Lett. 59, 916 (1991)Google Scholar
4 Hosoi, N. and Ohshita, Y., Appl. Phys. Lett. 63, 2703 (1993)Google Scholar