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Photonic Bandgap Formation by Wafer Bonding and Delamination

Published online by Cambridge University Press:  10 February 2011

Kazumi Wada ,
Thomas Chen ,
Jurgen Michel ,
Lionel C. Kimerling ,
Hiroshi Aga ,
Kiyoshi Mitani ,
Takao Abe  and
Masashi Suezawa
Kazumi Wada
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Thomas Chen
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Jurgen Michel
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Lionel C. Kimerling
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Hiroshi Aga
Affiliation:
Shin-Etsu Handotai, Isobe, Annaka, 379-0134, Japan
Kiyoshi Mitani
Affiliation:
Shin-Etsu Handotai, Isobe, Annaka, 379-0134, Japan
Takao Abe
Affiliation:
Shin-Etsu Handotai, Isobe, Annaka, 379-0134, Japan
Masashi Suezawa
Affiliation:
Institute of Materials Research, Tohoku University, Sendai, 980-77, Japan
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Abstract

A new approach for one-dimensional photonic bandgap formation is introduced. The method consists of wafer bonding and delamination, which is capable of stacking single crystalline semiconductor layers on non-crystalline insulator layers. Si and SiO2 layers with sub-wavelength periodicity are successfully stacked to form photonic crystals consisting of 3 pairs without a defect layer and of 4.5 pairs with a defect layer. The transmittance spectra are well reproduced by transfer matrix calculations. This clearly verifies the potential of the wafer bonding and delamination method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 121
Copyright
Copyright © Materials Research Society 1999

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References

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