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Phase-Change Nanowires for Non Volatile Memory

Published online by Cambridge University Press:  01 February 2011

Yi Cui ,
Stefan Meister  and
Hailin Peng
Yi Cui
Affiliation:
[email protected], Stanford University, Materials Science and Engineering, 476 Lomita Mall, Stanford, CA, 94305, United States, 1-650-723-4613
Stefan Meister
Affiliation:
[email protected], Stanford University, Materials Science and Engineering, 476 Lomita Mall, Stanford, CA, 94305, United States
Hailin Peng
Affiliation:
[email protected], Stanford University, Materials Science and Engineering, 476 Lomita Mall, Stanford, CA, 94305, United States
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Abstract

We report the synthesis of GeTe, Sb2Te3 and Ge2Sb2Te5 nanowires via a gold-catalyzed vapor-liquid-solid mechanism. The nanowires are studied via electron microscopy and energy-dispersive X-ray spectrometry and are found to be single crystalline. For electrical measurements contact to individual nanowires is made via electron-beam lithography. The nanowires can be switched from their initially low resistance state to a higher resistance state by applying a 200ns voltage pulse. Switching back to the low resistance state is possible via annealing. Electric force microscopy studies show the switching takes place at the metal-nanowire contact.

Keywords

memorynanoscalephase transformation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I11-06
Copyright
Copyright © Materials Research Society 2007

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References

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