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Phase Formation in Ti (Ta)-Ni and Co-Ti Films Deposited on (001)Si in N2 Atmospheres.

Published online by Cambridge University Press:  11 February 2011

A. L. Vasiliev ,
M. Aindow ,
A. G. Vasiliev ,
I. A. Horin  and
A. A. Orlikovsky
A. L. Vasiliev
Affiliation:
Department of Metallurgy and Materials Eng., Institute of Materials Science, Unit 3136, University of Connecticut, Storrs, CT 06269–3136
M. Aindow
Affiliation:
Department of Metallurgy and Materials Eng., Institute of Materials Science, Unit 3136, University of Connecticut, Storrs, CT 06269–3136
A. G. Vasiliev
Affiliation:
Institute of Physics and Technology Russian Academy of Sciences, Moscow, Russia Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Moscow, Russia.
I. A. Horin
Affiliation:
Institute of Physics and Technology Russian Academy of Sciences, Moscow, Russia
A. A. Orlikovsky
Affiliation:
Institute of Physics and Technology Russian Academy of Sciences, Moscow, Russia
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Abstract

A series of electron microscopy investigations on the microstructure produced by surface-diffusion reactions between Si substrates heated to 700–800°C and Ti-Co, Ti-Ni or Ta-Ni alloys deposited in a nitrogen ambient with and without barrier layers are described. The TEM data show clear phase separation into TaSi2 and NiSi2 for the Ta-Ni film deposited in a high N2 pressure ambient. Deposition at lower N2 pressure led to the formation of a mixed Ni-Ta-Si layer. The phase separation effect was also absent for Ni-Ti films even at high N2 pressure. The presence of barrier layers strongly affected the surface diffusion reactions in the Co-Ti-Si system. Formation of Ti-(O) or CoSix amorphous layers at the Si surface prevented the interdiffusion of Si and Co, such that even pure Co or Co2Si layers could be formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N4.10
Copyright
Copyright © Materials Research Society 2003

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References

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