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Pattern density effects in fixed abrasive polishing

Published online by Cambridge University Press:  01 February 2011

Rajasekhar Venigalla ,
Laertis Economikos  and
S.V. Babu
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Abstract

We investigated pattern density effects during chemical mechanical planarization (CMP) for shallow trench isolation (STI) applications using fixed abrasive pads to better control the fixed abrasive polishing process. We observed that the polishing characteristics of higher pattern density features are strongly dependent on the presence of lower pattern density features on the same die in the wafer. This has been attributed to the aggressive action of lower pattern density features on the fixed abrasive pad which results in a more effective activation of the pad by them. Thus even the 100% pattern density features are initially polished at a very high rate when lower density features are present.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 732: Symposium I – Chemical-Mechanical Planarization , 2002 , I12.3
Copyright
Copyright © Materials Research Society 2002

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References

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