Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
McGrath, John
and
Davis, Chris
2004.
Polishing pad surface characterisation in chemical mechanical planarisation.
Journal of Materials Processing Technology,
Vol. 153-154,
Issue. ,
p.
666.
Zantye, Parshuram B.
Kumar, Ashok
and
Sikder, A.K.
2004.
Chemical mechanical planarization for microelectronics applications.
Materials Science and Engineering: R: Reports,
Vol. 45,
Issue. 3-6,
p.
89.
2005.
Tribology In Chemical-Mechanical Planarization.
Wang, C.
Sherman, P.
and
Chandra, A.
2005.
A Stochastic Model for the Effects of Pad Surface Topography Evolution on Material Removal Rate Decay in Chemical–Mechanical Planarization.
IEEE Transactions on Semiconductor Manufacturing,
Vol. 18,
Issue. 4,
p.
695.
2005.
Tribology In Chemical-Mechanical Planarization.
Kasai, Toshi
and
Bhushan, Bharat
2008.
Physics and tribology of chemical mechanical planarization.
Journal of Physics: Condensed Matter,
Vol. 20,
Issue. 22,
p.
225011.
Gray, Caprice
White, Robert
Manno, Vincent P.
and
Rogers, Chris B.
2008.
Simulated Effects of Measurement Noise on Contact Measurements Between Rough and Smooth Surfaces.
Tribology Letters,
Vol. 29,
Issue. 3,
p.
185.
Tsai, Ming-Yi
Chen, Shun-Tong
Liao, Yunn-Shiuan
and
Sung, James
2009.
Novel diamond conditioner dressing characteristics of CMP polishing pad.
International Journal of Machine Tools and Manufacture,
Vol. 49,
Issue. 9,
p.
722.
Xin, J.
Cai, W.
and
Tichy, J.A.
2010.
A fundamental model proposed for material removal in chemical–mechanical polishing.
Wear,
Vol. 268,
Issue. 5-6,
p.
837.
Tsai, Ming-Yi
and
Peng, Jian-Da
2010.
Investigation of a Novel Diamond Disk's Effect on Pad Topography in Oxide Chemical Mechanical Polishing.
Materials and Manufacturing Processes,
Vol. 25,
Issue. 12,
p.
1440.
Wang, Y.
Zhao, Y. W.
and
Chen, X.
2012.
Chemical Mechanical Planarization from Macro-Scale to Molecular-Scale.
Materials and Manufacturing Processes,
Vol. 27,
Issue. 6,
p.
641.
Li, Shoutian
Gaudet, Greg
and
Nair, Jayakrishnan
2013.
ILD CMP with Silica Abrasive Particles: Effect of Pore Size of CMP Pad on Removal Rate Profiles.
ECS Journal of Solid State Science and Technology,
Vol. 2,
Issue. 3,
p.
P97.
Isobe, Akira
Ogata, Kenjiro
and
Kurokawa, Shuhei
2014.
Macromodel for changes in polishing pad surface condition caused by dressing and polishing.
Japanese Journal of Applied Physics,
Vol. 53,
Issue. 1,
p.
016501.
Wu, Lixiao
and
Yan, Changfeng
2015.
Effects of Polishing Parameters on Evolution of Different Wafer Patterns During Cu CMP.
IEEE Transactions on Semiconductor Manufacturing,
Vol. 28,
Issue. 1,
p.
106.
Stuffle, Calliandra
Han, Ruochen
Sampurno, Yasa
Slutz, David
Theng, Siannie
Borucki, Leonard
and
Philipossian, Ara
2018.
Effect of CVD-Coated Diamond Discs on Pad Surface Micro-Texture and Polish Performance in Copper CMP.
ECS Journal of Solid State Science and Technology,
Vol. 7,
Issue. 2,
p.
P9.
Terashkevich, D. I.
Bokova, E. S.
Ginzburg, A. S.
and
Kovalenko, G. M.
2021.
Microstructure analysis of polyurethane based polishing materials.
Plasticheskie massy,
p.
3.