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Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion

Published online by Cambridge University Press:  10 February 2011

Giovanni Manninoo ,
Nicholas E.B. Cowem ,
Peter A. Stolk ,
Fred Roozeboom ,
Hendrik G.A. Huizing ,
Jurgen G.M. van Berkum ,
Wiebe B. de Boer ,
Filadelfo Cristiano ,
Alain Claverie  and
Martin Jaraiz
Giovanni Manninoo
Affiliation:
Philips Research Laboratories, Eindhoven, The Netherlands
Nicholas E.B. Cowem
Affiliation:
Philips Research Laboratories, Eindhoven, The Netherlands
Peter A. Stolk
Affiliation:
Philips Research Laboratories, Eindhoven, The Netherlands
Fred Roozeboom
Affiliation:
Philips Research Laboratories, Eindhoven, The Netherlands
Hendrik G.A. Huizing
Affiliation:
Philips Research Laboratories, Eindhoven, The Netherlands
Jurgen G.M. van Berkum
Affiliation:
Philips Research Laboratories, Eindhoven, The Netherlands
Wiebe B. de Boer
Affiliation:
Philips Research Laboratories, Eindhoven, The Netherlands
Filadelfo Cristiano
Affiliation:
CEMES/CNRS, Toulouse, France
Alain Claverie
Affiliation:
CEMES/CNRS, Toulouse, France
Martin Jaraiz
Affiliation:
Dept. de Electricidad. y Electronica, University of Valladolid, Spain
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Abstract

The ripening of ion-beam generated point defects into extended defects has been investigated in detail. The interstitial supersaturation has been extracted from boron marker-layer diffusion after annealing under non-equilibrium defect conditions. We measured a very high initial supersaturation followed by a decrease over many orders of magnitude with a characteristic “plateau” related to the presence of {113} defects. A continuum inverse model has been used to properly describe the ripening of point defects into clusters and their evolution in the presence of a remote sink, e.g. the surface. It evidences that a nonconservative Ostwald ripening process takes place inside the defect band during the annealing and sustains the interstitial supersaturation. The model reveals moreover an oscillatory behaviour of dissociation energies of the nanometer-sized defects which are responsible for the initial high supersaturation. These defects are believed to be {113} precursors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 163
Copyright
Copyright © Materials Research Society 1999

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References

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