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Orientation and Boron Concentration Dependence of Si Layer Transfer by Mechanical Exfoliation

Published online by Cambridge University Press:  21 March 2011

Kimmo Henttinen ,
Tommi Suni ,
Arto Nurmela ,
Veli-Matti Airaksinen ,
Ilkka Suni  and
S.S Lau
Kimmo Henttinen
Affiliation:
VTT Electronics FIN-02044, Finland
Tommi Suni
Affiliation:
VTT Electronics FIN-02044, Finland
Arto Nurmela
Affiliation:
VTT Electronics FIN-02044, Finland
Veli-Matti Airaksinen
Affiliation:
Okmetic Oyj, FIN-01510 Vantaa, Finland
Ilkka Suni
Affiliation:
VTT Electronics FIN-02044, Finland
S.S Lau
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407, U.S.A
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Abstract

Mechanical exfoliation strength has been measured in hydrogen implanted <100>, <111> and <110> oriented Si wafers using the crack opening method. The bonding temperature required for exfoliation increases in the order <100>, <111> and <110>. The same method has been applied to study the influence of boron doping on mechanical exfoliation in <100> Si wafers. The required bonding temperature to exfoliate mechanically decreases with increasing doping level independent of the electrical activation of boron. The enhanced crystallization rate of boron doped Si is suggested as a plausible explanation for the result.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I9.1
Copyright
Copyright © Materials Research Society 2001

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References

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