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Optoelectronic Properties of Pseudomorphic SixGel1−x,/Ge Heterostructures on (001) Ge

Published online by Cambridge University Press:  28 February 2011

R. People
R. People*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ. 07974
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Abstract

The optical and electronic properties of pseudomorphic SixGel1−x/Ge heterostructures are reviewed in brief. Potential applications of conduction and valence band alignments for modulation doped field effect transistors are outlined. Optical transition energies are calculated for ultra-thin, alternating four monolayer, Si/Ge heterostructures on (001) Ge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 299
Copyright
Copyright © Materials Research Society 1987

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References

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