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Optimization of Sol-Gel Derived PZT thin Films by the Incorporation of Excess PBO

Published online by Cambridge University Press:  25 February 2011

G. Teowee ,
J. M. Boulton  and
D. R. Uhlmann
G. Teowee
Affiliation:
Arizona Materials Laboratories, Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
J. M. Boulton
Affiliation:
Arizona Materials Laboratories, Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
D. R. Uhlmann
Affiliation:
Arizona Materials Laboratories, Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
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Abstract

A series of PZT precursor solutions was prepared which incorporated excess PbO to give the composition Pb1+xZr0.53Ti0.47O3+x, where 0 < × < 0.3. These solutions were spin coated on platinized Si wafers and fired at elevated temperatures up to 750C for 30 mins. After crystallization into single-phase perovskite, the films were studied using XRD, optical microscopy and electrical characterization techniques (hysteresis loops and dielectric properties). It was found that the presence of excess PbO significantly improved the PZT films in terms of phase assemblage, microstructure and electrical properties. Under optimized conditions, films with dielectric constants of around 3000 can be obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 271: Symposium N – Better Ceramics Through Chemistry V , 1992 , 345
Copyright
Copyright © Materials Research Society 1992

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References

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