Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-19T06:54:32.615Z Has data issue: false hasContentIssue false
  • English
  • Français

Optimisation of Junctions formed by Solid Phase Epitaxial Regrowth for sub-70nm CMOS

Published online by Cambridge University Press:  01 February 2011

Richard Lindsay ,
Bartlomiej J. Pawlak ,
Peter Stolk  and
Karen Maex
Richard Lindsay
Affiliation:
IMEC, Kapeldreef 75, Leuven, B3001 Belgium. Philips Research Leuven, IMEC, Leuven, B3001 Belgium.
Bartlomiej J. Pawlak
Affiliation:
IMEC, Kapeldreef 75, Leuven, B3001 Belgium. Philips Research Leuven, IMEC, Leuven, B3001 Belgium.
Peter Stolk
Affiliation:
IMEC, Kapeldreef 75, Leuven, B3001 Belgium. Philips Research Leuven, IMEC, Leuven, B3001 Belgium.
Karen Maex
Affiliation:
IMEC, Kapeldreef 75, Leuven, B3001 Belgium. Philips Research Leuven, IMEC, Leuven, B3001 Belgium.
Get access

Abstract

For the 70nm CMOS node, it is anticipated that conventional implantation and spike annealing approaches, even with pre-amorphisation and co-implantation, are unlikely to provide pMOS junctions consistent with the ITRS requirements. Here the junction performance is limited by equilibrium solid solubility.

As laser annealing and in-situ doping techniques currently have unsolved integration problems, there is a renewed interest in using solid phase epitaxial regrowth (SPER) to form ultra-shallow metastable junctions. Such junctions have the potential to have an active dopant profile similar to the as-implanted profile. This offers above equilibrium solid solubility and abrupt profiles compatible with 70nm and even 45nm nodes. However there are concerns about residual defects, deactivation, diffusion and uniformity.

In this paper we show how the Ge, F and B implant and SPER anneal can be optimised for abrupt, uniform and highly activated B junctions. There is latitude for higher doses and energies than conventional implants, however results show that this may lead to clustering causing enhanced deactivation and reduced mobility. We give attention to the probing issues involved in characterising partially annealed junctions.

With this approach, p-type junctions having a sheet resistance of 265 ohms/sq and depth of 22nm are realised which are compatible with 70nm and potentially 45nm CMOS nodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C2.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Murto, R., Proc. 3rd National implant users meeting, Oct 1999 Google Scholar
[2] Lindsay, R., Lauwers, A., Frühauf, J., Potter, M. De, and Maex, K.. Proc. USJ2001, p255 Google Scholar
[3] Lerch, W., Mattson, Germany, private communicationGoogle Scholar
[4] Al-Bayati, A., Tandon, S., Mayur, A., Foad, M., Wagner, D., Murto, R., Sing, D., Ferguson, C., and Larson, L., Ion Implantation Technology, 2000. p 54–61 Google Scholar
[5] Ozturk, M. C., Wortman, J.J, Osburn, C. M., Ajmera, A., Rozgonyi, G. A., Frey, E.,Chu, W.K., Lee, C., IEEE Transactions on Electron Devices, Volume: 35 Issue: 5, May 1988 pp.659–668 Google Scholar
[6] Meyssen, V., Stolk, P., Zijl, J. Van, Berkum, J. Van, Wijgert, W. Van de, Lindsay, R., Dachs, C., Mannino, G., and Cowern, N.. Proceedings of Semicon West, San Francisco, April 2001 Google Scholar
[7] Li, H.J.; Kohli, P., Ganguly, S., Kirichenko, T. A., Zeitzoff, P., Torres, K., Banerjee, S., Electron Devices Meeting, IEDM Technical Digest. International, 2000. pp 515–518 Google Scholar
[8] Robertson, L. S., Warnes, P.N., Law, M. E., Jones, K. S., Downey, D. F., Liu, J., Ion Implantation Technology, 2000, pp.171–174 Google Scholar
[9] Ban, I., Ozturk, M. C., Demirlioglu, E., IEEE Transactions on Electron Devices, Volume: 44 Issue: 9, Sept. pp 1544–1551 Google Scholar
[10] Pawlak, B.J., Lindsay, R., Surdeanu, R., Stolk, P., Maex, K., submitted to IIT2002-03-25Google Scholar
[11] Talwar, S., Felch, S., Downey, D., Wang, Y., Ion Implantation Technology, 2000. pp175–177 Google Scholar
[12] Mayur, A., AMAT, Santa Clara, private communicationGoogle Scholar
[13] Gannavaram, S., Pesovic, N., Ozturk, M. C., Electron Devices Meeting, 2000. IEDM Technical Digest. International, pp 437–440 Google Scholar
[14] Jin, J.Y., Liu, J., Jeong, U., Metha, S., Jones, K., J. Vac. Sci. Tech. B 20(1) 2002, p422 Google Scholar
[15] Hong, S. N., Ruggles, G. A., Wortman, J. J., Ozturk, M. C., IEEE Transactions on Electron Devices, Volume: 38 Issue: 3, March 1991 pp 476–486 Google Scholar
[16] Borland, J. O., Semiconductor International, April 2000, pp70–80 Google Scholar
[17] Adekoya, W. O., Hage-Ali, M., Muller, J.C., Stiffert, P., J. Appl. Phys. 64 (2) 1988, p666 Google Scholar
[18] Osburn, C. M., Downey, D. F., Felch, S. B., Lee, B. S., Ion implantation Tech. 1996, p832 Google Scholar
[19] Tsuji, K., Takeuchi, K., Mogami, T., IEDM Tech Dig 1999, p9 Google Scholar
[20] Kuznetsov, V. I., Storm, A.B., Snijders, G. J., Ridder, C. de, Ruijl, T. A. M., Sanden, J.C.G vd, Granneman, E.H.A, 197th Meeting of Elect. Chem. Soc May 14-18th 2000, p1 Google Scholar
[21] Clarysse, T., Vanhaeren, D., Vanderworst, W., J. Vac. Sci. Tech B 20(1) 2002, p459 Google Scholar
[22] Agarwal, A., Fiory, A. T., Gossmann, H.J., Rafferty, C., Frisella, P., Hebb, J., Jackson, J., Ion Implantation Technology Proceedings, 1998, Volume: 1, pp22–25 Google Scholar
[23] Liebert, R. B., Walther, S. R., Felch, S. B., Fang, Ziwei; Koo, Bon-Woong, Hacker, D., The first international workshop on Junction Technology, 2000, p23–27 Google Scholar
[24] Shenjun, Z. Berg, J. A. V. D, Armour, D. G., Whelan, S., Goldberg, R. G., Bailey, P., Noakes, T. C. Q., Ion Implantation Technology, 2000, pp119–122 Google Scholar
[25] Banisaukas, H., Jones, K., Talwar, S., Downey, D. F., Falk, S., Mat. Sci. Semi. Proc. 4 (2001), p339–343 Google Scholar
[26] Robertson, L. S., PhD Thesis, University of Florida 2001 Google Scholar