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Optical Properties of Metal Films and Their Silicides

Published online by Cambridge University Press:  25 February 2011

M. Simard-Normandin ,
A. Naem  and
M. Saran
M. Simard-Normandin
Affiliation:
Teleom Microelectronics Centre, Northern Telecom Limited, P.O. Box 3511 Sta. C, Ottawa, Canada, K1Y 4H7
A. Naem
Affiliation:
Teleom Microelectronics Centre, Northern Telecom Limited, P.O. Box 3511 Sta. C, Ottawa, Canada, K1Y 4H7
M. Saran
Affiliation:
Teleom Microelectronics Centre, Northern Telecom Limited, P.O. Box 3511 Sta. C, Ottawa, Canada, K1Y 4H7
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Abstract

Silicides are used widely in microelectronic fabrication, yet there are very little data available regarding their optical constants at most wavelengths, and specifically at those of interest to G-line and I-line lithography. We have studied extensively the optical properties of Ti, Co, as metal films and as silicide films formed at various temperatures, and of CVD (chemical vapour deposition) W. Using spectroscopic ellipsometry at two angles of incidence, we have calculated the complex index of refraction N = (n, k) of these films every 10nm at 68 wavelengths between 230 and 900nm. These data are necessary to model accurately the reflectivity of wafers to study the effects of various thermal and surface treatments on silicide growth and to set exposure times for lithography. They also allow the use of reflectivity vs X as a non-contact method to map film thicknesses across wafers within the patterned devices themselves.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 461
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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