No CrossRef data available.
Article contents
Optical Characterization Of GaAs/Si: Spectral Features in the Excitonic Region
Published online by Cambridge University Press: 28 February 2011
Abstract
Using 4.2 K selective photoluminescence (PL) excitation and PL excitation spectroscopy, the n = 2 excited state of the light-hole exciton is observed for the first time in GaAs/Si. The excited state is about 3 meV above the ground state, similar to exciton results for GaAs/GaAs. A spectral width of 1.8 meV is observed for the ground state transition, the narrowest yet reported.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1987