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The Optical and Electrical Properties of SiOx(x<2) Thin Films Prepared by Pulsed Laser Deposition Technique

Published online by Cambridge University Press:  01 February 2011

Byoung Youl Park ,
Sol Lee ,
Chang Hyun Bae ,
Seung Min Park  and
Kyoungwan Park
Byoung Youl Park
Affiliation:
[email protected], University of Seoul, Nano Science & Technology, 90 Jeonnongdong Dongdaemungu, Seoul, 130-743, Korea, Republic of
Sol Lee
Affiliation:
[email protected], University of Seoul, Department of Nano Science & Technology, 90 Jeonnongdong Dongdaemungu, Seoul, 130-743, Korea, Republic of
Chang Hyun Bae
Affiliation:
[email protected], Kyung Hee University, Department of Chemistry, 1 Hoigidong Dongdaemungu, Seoul, 130-701, Korea, Republic of
Seung Min Park
Affiliation:
[email protected], Kyung Hee University, Department of Chemistry, 1 Hoigid ong Dongdaemungu, Seoul, 130-701, Korea, Republic of
Kyoungwan Park
Affiliation:
[email protected], University of Seoul, Department of Nano Science & Technology, 90 Jeonnongdong Dongdaemungu, Seoul, 130-743, Korea, Republic of
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Abstract

SiOx (x<2) films were deposited in an O2 atmosphere using Si target in a pulsed laser deposition system. Post-annealing process was employed in an O2 atmosphere to form the nanometer-sized Si crystallites embedded in the SiO2 films. The transmission electron microscope analysis shows the existence of crystalline silicon nano-dots with diameters ranging from 2 to 4 nm. Also, the clear separation of Si and SiO2 phases can be seen in the X-ray photoemission spectra. Photoluminescence peak from the annealed films was obtained, which is attributed to the quantum confinement effect of the Si nano-dots. C-V measurements of the metal-oxide-silicon (MOS) structure containing the silicon nano-dots in the oxide layer were performed to investigate the charging/discharging behavior of the silicon nano-dots. The maximum program window of the MOS was measured to be4.1V under ±5V sweep.

Keywords

Sinanostructurememory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I03-05
Copyright
Copyright © Materials Research Society 2007

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