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Optical and Crystallographic Properties of Inverse Opal Photonic Crystals Grown by Atomic Layer Deposition

Published online by Cambridge University Press:  01 February 2011

Jeffrey S. King
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0245
Curtis W. Neff
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0245
Dawn L. Heineman
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0245
Elton D. Graugnard
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0245
Christopher J. Summers
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0245
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Abstract

We report a technique for the formation of infiltrated and inverse opal structures that produces high quality, low porosity conformal material structures. ZnS:Mn and TiO2 were deposited within the void space of an opal lattice by atomic layer deposition. The resulting structures were etched with HF to remove the silica opal template. Infiltrated and inverse opals were characterized by SEM, XRD, and transmission/reflection spectroscopy. The reflectance spectra exhibited features corresponding to strong low and high order photonic band gaps in the (111) direction (γ-L). In addition, deliberate partial infiltrations and multi-layered inverse opals have been formed. The effectiveness of a post-deposition heat treatment for converting TiO2 films to rutile was also studied.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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