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Novel [Topography-Sensitive] Bottom-Up Growth of Ruthenium and Copper for Filling Nano-Features Using Supercritical Co2 Fluids: Beyond Scalability

Published online by Cambridge University Press:  01 February 2011

Eiichi Kondoh
Affiliation:
[email protected], University of Yamanashi, Interdisciplinary graduate schoold of medicine and engineering, Takeda 4-3-11, Kofu, 400-8511, Japan
M. Hirose
Affiliation:
[email protected], University of Yamanashi, Interdisciplinary Graduate School of Medicine and Engineering, Takeda 4-3-11, Kofu, 400-8511, Japan
E. Ukai
Affiliation:
[email protected], University of Yamanashi, Interdisciplinary Graduate School of Medicin e and Engineering, Takeda 4-3-11, Kofu, 400-8511, Japan
K. Nagano
Affiliation:
[email protected], University of Yamanashi, Faculty of Engineering, Takeda 4-3-11, Kofu, 400-8511, Japan
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Abstract

A novel selective and bottom-up deposition process from supercritical CO2 is proposed and demonstrated. Supercritical CO2 fluids are dense media, and a deposition precursor dissolving wherein can easily condences in hollow/concave features. By combining this capillary condensation phenomenon with proper reaction chemistry, it was realized to deposit Ru an Cu in holes and trenches structures preferentially. The capillary condensation occurs better in the narrower features, we call this method “gtopography-sensitive” selective deposition technique.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

2. Hybertson, B. M., Hanse, B. N., Barkley, R. M., Sievers, R. E., Mater. Res. Bull. 26, 1127 (1991).Google Scholar
3. Louchev, O. A., Popov, V. K., Antonov, E. N., J. Cryst. Growth 155, 276 (1995).Google Scholar
4. Kondoh, E., Kato, H., Microelectron. Eng. 64, 495 (2002); E. Kondoh, Jpn. J. Appl. Phys. 43, 3928 (2004).Google Scholar
5. Cabañas, A., Blackburn, J. M., Watkins, J. J., Microelectron. Eng. 64, 53 (2002).Google Scholar
6. Ye, X.-R., Lin, Y., Wang, C., Wai, C. M., Adv. Mater. 15, 316 (2003).Google Scholar
7. ULSI Technology, ed. Chang, C. Y. and Sze, S. M., (McGraw-Hill, 1996), Section 8.2.3.Google Scholar
8. Kondoh, E., Jpn. J. Appl. Phys. 44, 5799 (2005).Google Scholar
9. Jiang, S., Rhykerd, C. L., Gubbins, K. E., Molecular Phys. 79, 373 (1993).Google Scholar