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A novel technique for in-situ monitoring of crystallinity and temperature during rapid thermal annealing of thin Si/Si-Ge films on quartz/glass

Published online by Cambridge University Press:  10 February 2011

V. Subramanian ,
F. L. Degertekin ,
P. Dankoski ,
B. T. Khuri-Yakub  and
K. C. Saraswat
V. Subramanian
Affiliation:
Electrical Engineering Department, Stanford University, Stanford, CA, 94305
F. L. Degertekin
Affiliation:
Electrical Engineering Department, Stanford University, Stanford, CA, 94305
P. Dankoski
Affiliation:
Electrical Engineering Department, Stanford University, Stanford, CA, 94305
B. T. Khuri-Yakub
Affiliation:
Electrical Engineering Department, Stanford University, Stanford, CA, 94305
K. C. Saraswat
Affiliation:
Electrical Engineering Department, Stanford University, Stanford, CA, 94305
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Abstract

A novel technique is presented to simultaneously measure temperature and crystallinity insitu during the rapid thermal annealing of thin Si / SiGe films on transparent substrates for active matrix liquid crystal display applications. The technique uses acoustic waves to monitor temperature, by measuring changes in velocity with temperature. The technique enables accurate tracking of crystalline phase transitions along with temperature, since it is independent of emissivity. This provides a methodology for closed-loop control and end-point detection. The experiments on thin amorphous Si on Quartz demonstrate temperature repeatability of 2%. Also, the technique proved sensitive enough to detect the onset of nucleation, as evidenced by TEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 267
Copyright
Copyright © Materials Research Society 1997

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References

1. Morita, T., Tsuchimoto, S. and Hashizume, N. in Flat Panel Display Materials, edited: Batey, J., Chiang, A., and Holloway, P. H. (Mat. Res. Symp. Proc. 345, Pittsburgh, PA 1994), p. 71–80.Google Scholar
2. Degertekin, F.L., Pei, J., Khuri-Yakub, B.T., Saraswat, K., Appl. Phys. Lett. 64, p. 1338–1340 (1994).Google Scholar
3. Saraswat, K. C. et al, IEEE Trans. on Semiconductor Manufacturing, 7, p. 159–175 (1994).Google Scholar
4. Kretz, T., Pribat, D., Legagneux, P., Plais, F., Huet, O. and Magis, M. in Flat Panel Display Materials, edited by Batey, J., Chiang, A., and Holloway, P. H. (Mat. Res. Symp. Proc. 345, Pittsburgh, PA 1994), p. 123–128.Google Scholar