Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-27T02:16:50.710Z Has data issue: false hasContentIssue false
  • English
  • Français

A novel 3C-SiC on Si power Schottky diode design and modelling

Published online by Cambridge University Press:  10 June 2014

Fan Li ,
Yogesh K. Sharma ,
Craig A. Fisher ,
Michael R. Jennings  and
Philip A. Mawby
Fan Li
Affiliation:
School of Engineering, University of Warwick, Library Road, Coventry, CV4 7AL, UK.
Yogesh K. Sharma
Affiliation:
School of Engineering, University of Warwick, Library Road, Coventry, CV4 7AL, UK.
Craig A. Fisher
Affiliation:
School of Engineering, University of Warwick, Library Road, Coventry, CV4 7AL, UK.
Michael R. Jennings
Affiliation:
School of Engineering, University of Warwick, Library Road, Coventry, CV4 7AL, UK.
Philip A. Mawby
Affiliation:
School of Engineering, University of Warwick, Library Road, Coventry, CV4 7AL, UK.
Get access

Abstract

Although 3C-SiC has a narrower bandgap than 4H-SiC, it is the only SiC polytype that can be grown directly over large area silicon substrates. It has the potential to provide a more economical choice than 4H-SiC for intermediate power devices, such as inverters for electric vehicles. To fabricate a vertical device on 3C-SiC, the Si substrate is usually removed either by etching or polishing. Neither of these processes is economical nor efficient. In this paper we propose a lateral Schottky diode design for 3C-SiC on Si structure. 2D finite element simulations using ATLAS showed that a breakdown voltage beyond 1200 V can be achieved with a 4 μm thick epilayer. Physical models used for 3C-SiC/Si power devices simulations are introduced. Advantages of lateral 3C-SiC/Si diodes over free standing 3C-SiC are also discussed.

Keywords

devicessimulationcompound
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide‒Materials, Processing and Devices , 2014 , mrss14-1693-dd06-16
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Sharma, Y. K., Ahyi, A. C., Isaacs-Smith, T., Modic, A., Park, M., Xu, Y., et al. ., "High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer," Electron Device Letters, IEEE, vol. 34, pp. 175–177, 2013.CrossRefGoogle Scholar
(2013, 25th Feb). Epitaxial SiC Films Grown on 300mm Si Wafers. Available: http://www.prnewswire.com/news-releases/epitaxial-sic-films-grown-on-300mm-si-wafers-209304461.html Google Scholar
Hatta, N., Kawahara, T., Yagi, K., Nagasawa, H., Reshanov, S. A., and Schöner, A., "Reliable Method for Eliminating Stacking Fault on 3C-SiC (001)," in Materials Science Forum, 2012, pp. 173–176.CrossRefGoogle Scholar
Bakowski, M., Schöner, A., Ericsson, P., Strömberg, H., Nagasawa, H., and Abe, M., "Development of 3C-SiC MOSFETs," Journal of Telecommunication and information Technology, vol. 2, 2007.Google Scholar
Uchida, H., Minami, A., Sakata, T., Nagasawa, H., and Kobayashi, M., "High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility," in Materials Science Forum, 2012, pp. 1109–1112.CrossRefGoogle Scholar
Craig, F., Michael, J., Dean, H., Yogesh, S., Stephen, T., Fan, L., et al. ., "Enhanced Forward Bias Operation of 4H-SiC PiN Diodes Using High Temperature Oxidation," in 2014 MRS Spring Meeting & Exhibit, San Francisco, 2014.Google Scholar
Yakimova, R., Vasiliauskas, R., Eriksson, J., and Syväjärvi, M., "Progress in 3C-SiC growth and novel applications," in Materials Science Forum, 2012, pp. 3–10.CrossRefGoogle Scholar
Shockley, W., "Problems related to p-n junctions in silicon," Solid-State Electronics, vol. 2, pp. 35–67, 1// 1961.CrossRefGoogle Scholar
Nilsson, H. E., Englund, U., Hjelm, M., Bellotti, E., and Brennan, K., "Full band Monte Carlo study of high field transport in cubic phase silicon carbide," Journal of Applied Physics, vol. 93, pp. 3389–3394, 2003.CrossRefGoogle Scholar
Caughey, D. M. and Thomas, R. E., "Carrier mobilities in silicon empirically related to doping and field," Proceedings of the IEEE, vol. 55, pp. 2192–2193, 1967.CrossRefGoogle Scholar
Roschke, M. and Schwierz, F., "Electron mobility models for 4H, 6H, and 3C SiC," Electron Devices, IEEE Transactions on, vol. 48, pp. 1442–1447, 2001.CrossRefGoogle Scholar
Raynaud, C., Tournier, D., Morel, H., and Planson, D., "Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices," Diamond and Related Materials, vol. 19, pp. 1–6, 1// 2010.CrossRefGoogle Scholar
Boksteen, B., Hueting, R., Salm, C., and Schmitz, J., "An Initial study on The Reliability of Power Semiconductor Devices," 2010.Google Scholar