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Non-routine Dopant, Impurity and Stoichiometry Characterization of SiGe, SiON and Ultra-low Energy B-implanted Si Using Secondary Ion Mass Spectrometry

Published online by Cambridge University Press:  01 February 2011

Charles W. Magee ,
Temel H. Buyuklimanli ,
John W. Marino ,
Steven W. Novak  and
M. Alper Sahiner
Charles W. Magee
Affiliation:
Evans East (A member of the Evans Analytical Group) 104 Windsor Center Drive, Suite 101, East Windsor, New Jersey 08520 USA
Temel H. Buyuklimanli
Affiliation:
Evans East (A member of the Evans Analytical Group) 104 Windsor Center Drive, Suite 101, East Windsor, New Jersey 08520 USA
John W. Marino
Affiliation:
Evans East (A member of the Evans Analytical Group) 104 Windsor Center Drive, Suite 101, East Windsor, New Jersey 08520 USA
Steven W. Novak
Affiliation:
Evans East (A member of the Evans Analytical Group) 104 Windsor Center Drive, Suite 101, East Windsor, New Jersey 08520 USA
M. Alper Sahiner
Affiliation:
Evans East (A member of the Evans Analytical Group) 104 Windsor Center Drive, Suite 101, East Windsor, New Jersey 08520 USA
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Abstract

New, non-routine metrology issues are addressed for three kinds of materials and processes that are necessary for the fabrication of ultra-high speed devices. We look at the problems and solutions for measuring both stoichiometry and dopant content of SiGe material when using Cs primary ion bombardment. We examine the challenges of determining the N content of ultra-thin SiON gate dielectrics with emphasis on what will be necessary for the measurement of 1nm thick oxides. And finally we show some promising early results of using a new protocol for measuring ULE B ion implant profiles in the top 3nm with emphasis on obtaining a more realist profile shape in this region for TCAD modeling purposes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C6.1/B9.1
Copyright
Copyright © Materials Research Society 2002

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