Hostname: page-component-f554764f5-fr72s Total loading time: 0 Render date: 2025-04-10T08:12:00.914Z Has data issue: false hasContentIssue false
  • English
  • Français

Nickel Related Absorption Lines in High-Pressure Synthetic Diamond

Published online by Cambridge University Press:  21 February 2011

M. H. Nazaré ,
J. C. Lopes  and
H. Kanda
M. H. Nazaré
Affiliation:
Departamento de Física, Universidade de Aveiro, 3800 Aveiro, Portugal
J. C. Lopes
Affiliation:
Departamento de Física, Universidade de Aveiro, 3800 Aveiro, Portugal
H. Kanda
Affiliation:
National Institute for Research in Inorganic Materials, Namiki 1–1, Tsukuba, Japan
Get access

Abstract

Diamonds grown by the temperature gradient method using a nickel catalyst show an optical absorption band, extending from 2.5 eV to 2.56 eV, with a zero-phonon line at 2.51 eV. At 4 K this line exhibits fine structure; it is made up of 3 components at 2.509 eV, 2.510 eV and 2.511 eV. In absorption the fine structure components have the same relative intensity at different temperatures. We report on the effects of uniaxial stress on the zero-phonon transition at 77 K. We propose an interpretation of the results according to which the optical defect has a tetrahedral symmetry, and the 2.51 eV line occurs between two T2 states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 625
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Collins, A.T., Kanda, H., and Bums, R.C., Phil. Mag. B 61, 797 (1990).Google Scholar
2. Davies, G., Neves, A.J., and Nazaré, M.H., Europhys. Lett. 9, 47 (1989).Google Scholar
3. Nazaré, M.H., Neves, A. J., and Davies, G., Phys. Rev. B 43, 196 (1991).Google Scholar
4. Lawson, S.C., Kanda, H., and Sekita, M., Phil. Mag. 68, 39 (1993).Google Scholar
5. Nazaré, M.H. and Rino, L.M., Materials Science and Engineering B 21, 329 ( 1993).Google Scholar