Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T02:27:25.789Z Has data issue: false hasContentIssue false
  • English
  • Français

A New Two-Step Plasma-Assisted Surface Cleaningoxidation and Film-Deposition Process Sequence for The Formation of Si(100)/SiO2 Interfaces with Low Densities of Interfacial Traps

Published online by Cambridge University Press:  25 February 2011

Y. Ma ,
T. Yasuda ,
S. Habermehl ,
S.S. He ,
D.J. Stephens  and
G. Lucovsky
Y. Ma
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
T. Yasuda
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
S. Habermehl
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
S.S. He
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
D.J. Stephens
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
Get access

Abstract

Device quality SiO2 films have been deposited by Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD). The substrate surface cleaning, both ex-situ and insitu, influence the density of trapping states at the Si/SiO2 interface. Pre-deposition exposure to plasma-generated atomic-H significantly reduces hydrocarbon and 0 contamination, but damages the Si surface leading to high interface trap densities (Dit) in the Si band-gap. Pre-deposition exposure to plasma generated O-atoms, removes the residual hydrocarbons, and oxidizes the Si substrate while maintaining an atomically smooth interface. Metal Oxide Semiconductor (MOS) structure fabricated by RPECVD have midgap Dit values of ∼1-3×1010cm−2eV−1 for 0-plasma cleaned surface. Final rinse after RCA cleaning in HF solutions with different pH values affects surface morphology; however surface roughening by atomic-H is always the determinant contributor to high values of Dit.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 69
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lucovsky, G., Tsu, D. V., Rudder, R. A., and Markunas, R. J., in “Thin Film Process II”, ed. by Vossen, J. L. and Kern, W., Academic Press, 1991 Google Scholar
2. Fountain, G. G., Rudder, R. A., Hattangady, S. V., Markunas, R. J., and Lindorme, P. S., J. Appl. Phys. 63(9), 4744 (1988)CrossRefGoogle Scholar
3. Kim, S. S., Stephens, D. J., Lucovsky, G., Fountain, G., and Markunas, R. J., J. Vac. Sci. Technol. A8, 2039 (1990)Google Scholar
4. Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., Appl. Phys. Lett. 60(4), 434 (1992)Google Scholar
5. Ma, Y., Yasuda, T., Habermehl, S., and Lucovsky, G., J. Vac. Sci. & Technol. A10 (1992), to be published.Google Scholar
6. Anthony, B., Hsu, T., Breaux, L., Qian, R., Banerjee, S., and Tasch, A., J. Electronic Materials, 19, 1027 (1990)Google Scholar
7. Ma, Y., Yasuda, T, Habermehl, S., and Lucovsky, G., MRS Symp. Vol. 236 (1991). to be published.Google Scholar
8. Ishii, M., Nakashima, K., Tajima, I. and Yamamota, M., Appl. Phys. Lett. 58, 1378 (1991)CrossRefGoogle Scholar
9. Poindexter, E. H., Geradi, G. J., Rueckel, M. E., and Caplan, P. J., Johnson, N. M. and Biegelsen, D. K., J. Appl. Phys. 56, 2844 (1984)Google Scholar
10. Kasi, S. R. and Liehr, M., Appl. Phys. Lett. 57 (20), 2095 (1990)Google Scholar
11. Himpsel, F. J., McFeely, F. R., Taleb-Ibrahimi, A., Yarmoff, J. A., and Hollinger, G., Phys. Rev. B38, 6084 (1988)Google Scholar
12. Higashi, G. S., Becker, R. S., Chabal, Y. J., and Becker, A. J., Appl. Phys. Lett. 58 (15), 1656 (1991)Google Scholar
13. Yasuda, T., Ma, Y., Habermehl, S., He, S. S., Stephens, D. and Lucovsky, G., MRS Symp. Vol 262. to be published.Google Scholar