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A New Technique to Generate Conductive Paths in Dielectric Materials

Published online by Cambridge University Press:  15 February 2011

M. J. Desilva
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996-2200.
A. J. Pedraza
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996-2200.
D. H. Lowndes
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996-2200. Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6056
M. J. Godbole
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996-2200. Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6056
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Abstract

We have developed a new two-step process to generate a metallic pattern on dielectric materials. This method employs ultraviolet (uv) laser irradiation followed by electroless deposition. A few laser pulses are required to generate the pattern. After immersion in an electroless bath, the metal film is deposited only on the uv exposed area. Results of the application of this method to aluminum nitride and alumina are presented. The laser irradiation step is very fast, and the electroless deposition is simplified because it does not require any special seeding to promote activation, i.e. laser irradiation activates the dielectric surface for electroless deposition. In addition, the laser-induced activation of the insulator is maintained for a very long time allowing electroless deposition to be performed many months after irradiation. Patterns in the tens of microns can be produced on laser-exposed substrates. Pull tests have been performed to determine the bond strength. We have found that the bond strength can be further increased by annealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

1. Esrom, H., MRS Symp. Proc., vol.204, 457, (1991).Google Scholar
2. Morita, N., Watanabe, T., and Yoshida, Y., Appl. Phys. Lett., vol.54, No. 20, 19741975 (1989).Google Scholar
3. Pedraza, A. J., Godbole, M. J., DeSilva, M. J. and Lowndes, D. H., MRS Symp. Proc., vol.285, 203208, (1993).Google Scholar
4. Kluge-Weiss, P. and Gobreicht, J., “Directly bonded copper metallization of AIN substrates for power hyrids,” Mater. Res. Soc. Symp. Proc., vol.40, 399404, (1985)Google Scholar
5. Emura, H., Onituka, K., and Maruyama, H., Advances in Ceramics, vol.26Ceramic substrates and packages for electronic packages”, 375385, (1989).Google Scholar
6. DeSilva, M. J., Pedraza, A. J., and Lowndes, D. H., “Electroless Copper Films Deposited onto Laser-Activated Aluminum Nitride and Alumina”, to be published in the Journal of Materials Research.Google Scholar
7. Cao, S., Pedraza, A.J. and Allard, L., to be published.Google Scholar