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A New Solution to the Ni-fill issue for Silicide-last Process

Published online by Cambridge University Press:  18 July 2013

Shu J. Mao ,
Li C. Zhao ,
Jun. Luo  and
Jiang. Yan
Shu J. Mao
Affiliation:
Institute of Microelectronics, Chinese Academy of Sciences, Beitucheng West Rosd, Beijing, PA100029, China.
Li C. Zhao
Affiliation:
Institute of Microelectronics, Chinese Academy of Sciences, Beitucheng West Rosd, Beijing, PA100029, China.
Jun. Luo
Affiliation:
Institute of Microelectronics, Chinese Academy of Sciences, Beitucheng West Rosd, Beijing, PA100029, China.
Jiang. Yan
Affiliation:
Institute of Microelectronics, Chinese Academy of Sciences, Beitucheng West Rosd, Beijing, PA100029, China.
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Abstract

Metal Nickel(Ni) fill becomes the challeng in integrating silicide-last process into CMOS advanced technology with further contact size scaling. In this work, the specific contact resistivity (ρc) of cold titanium(Ti)/Si was investigated by the cross-bridge Kelvin resistor(CBKR) method and compared with that of Ni(Pt)Si/Si. The cold Ti/n+-Si showed comparable contact resistance(ρc∼3x10-8Ω·cm2) to Ni(Pt)Si/ n+-Si, while a larger ρc(7.5x10-1Ω·cm2) for cold Ti formed on B+ doped Si substrates. The cold Ti/Si interface was also discussed. Our results furnish a fresh perspective on the solutions to the metal fill challeng for silicide-last process.

Keywords

NisemiconductingSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1559: Symposium AA – Advanced Interconnects for Micro- and Nanoelectronics—Materials, Processes and Reliability , 2013 , mrss13-1559-aa05-15
Copyright
Copyright © Materials Research Society 2013 

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References

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