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A New Poly-Si CMP Process with Small Erosion for Advanced Trench Isolation Process

Published online by Cambridge University Press:  17 March 2011

Naoto Miyashita ,
Shin-ichiro Uekusa ,
Takeshi Nishioka  and
Satoko Iwami
Naoto Miyashita
Affiliation:
Dept of Electrical and Electronic Engineering, Meiji Univ., Toshiba Co, Semiconductor Company 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Yokohama, Japan
Shin-ichiro Uekusa
Affiliation:
Dept of Electrical and Electronic Engineering, Meiji Univ., Kawasaki, Japan
Takeshi Nishioka
Affiliation:
Mechanical Systems Laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, Japan
Satoko Iwami
Affiliation:
Mechanical Systems Laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, Japan
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Abstract

Chemical-Mechanical Polishing has been revealed as an attractive technique for poly-Si of trench planalization. Major issue of the process integration is pattern erosion after over polishing. A new process with silica slurry containing organic surfactant is reported in this paper. A patterned wafer after conventional CMP process is eroded by over polishing, however, the new process conducts small erosion for wide trenches. The organic surfactant is well known as a inhibitor for the protection of poly-Si from alkaline, and the new slurry shows a large pH dependency of the viscosity. The experimental work has been focused on the viscosity, and the mechanism of the small erosion is discussed. This new process should be useful for recessing poly-Si by CMP, because it keeps the erosion level very low.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D11.3.1
Copyright
Copyright © Materials Research Society 2000

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References

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