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Nanosecond Thermal Processing of Polysilicon thin Films

Published online by Cambridge University Press:  21 February 2011

A. M. McCarthy ,
K. H. Weiner  and
Tom. W. Sigmon
A. M. McCarthy
Affiliation:
Special Studies Division, Lawrence Livermore National Laboratory, L-271, Livermore, CA 94550
K. H. Weiner
Affiliation:
Special Studies Division, Lawrence Livermore National Laboratory, L-271, Livermore, CA 94550
Tom. W. Sigmon
Affiliation:
Solid State Laboratory, McC 322, Dept. of Electrical Engineering, Stanford University
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Abstract

Significant improvement in properties of polysilicon thin films for VLSI applications was achieved using nanosecond thermal processing causing laser-induced melting followed byrecrystallization. Sheet resistance was reduced by as much as a factor of five on polysilicon thin films and underlying oxide integrity was not detectably disturbed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 121
Copyright
Copyright © Materials Research Society 1990

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References

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