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Morphology and Defect Structure of Sputtered High-Quality In-Situ YBa2Cu3O7−δ Films

Published online by Cambridge University Press:  21 February 2011

S. K. Streiffer
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA. 94305
B. M. Lairson
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA. 94305
C. B. Eom
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA. 94305
A. F. Marshallt
Affiliation:
Center for Materials Research, Stanford, CA. 94305
J. C. Bravman
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA. 94305
T. H. Geballe
Affiliation:
Department of Applied Physics, Stanford, CA. 94305
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Abstract

Transmission Electron Microscopy has been used to study the morphology and defect structure of sharp superconducting transition, high (2-6 ×107 A/cm2) critical current YBa2Cu3O7−δ films on MgO substrates. These were oriented such that the unit cell axes of the film aligned with those of the substrate, with some domains obeying a second orientation relationship rotated by 45° in the plane of the film, i.e. film <110> parallel to substrate <100>. The latter is not expected from simple lattice matching considerations. A strong influence of substrate surface topography on film microstructure was noted, leading to a high density of out-of-phase, low-angle tilt, and other boundaries near the substrate-film interface, which decreased with increasing distance from the substrate. Finally, the effects on film microstructure of two variables of specific interest in our sputtering system were investigated: the thickness of the deposited film, and the temperature at which a high oxygen pressure (500 torr) is introduced after deposition is complete. Increases in film thickness resulted in longer, more widely spaced twins, whereas lower oxygenation temperatures resulted in shorter twins.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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