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Modification of optical response in quantum dots embedded in a photonic crystal waveguide via photonic band engineering

Published online by Cambridge University Press:  20 July 2012

Nobuhiko Ozaki ,
Hayato Yoneda ,
Koichi Takeuchi ,
Hisaya Oda ,
Naoki Ikeda ,
Yoshimasa Sugimoto ,
Yoshinori Watanabe  and
Kiyoshi Asakawa
Nobuhiko Ozaki
Affiliation:
Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640-8510, Japan
Hayato Yoneda
Affiliation:
Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640-8510, Japan
Koichi Takeuchi
Affiliation:
Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640-8510, Japan
Hisaya Oda
Affiliation:
Faculty of Photonics Science, Chitose Institute of Science and Technology, 758-65 Bibi, Chitose, Hokkaido 066-8655, Japan
Naoki Ikeda
Affiliation:
National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
Yoshimasa Sugimoto
Affiliation:
National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
Yoshinori Watanabe
Affiliation:
National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
Kiyoshi Asakawa
Affiliation:
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8571, Japan
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Abstract

We propose to use Purcell effect emerged at slow light regions in photonic crystal waveguide (PC-WG) modes for controlling the relaxation time of excited carriers in QDs. Straight GaAs PC-WGs including InAs-QDs with various lattice constants of PC were prepared in order to control the wavelength of the slow light in the PC-WG modes. PL measurements of the PC-WGs indicated enhancements of emission from QDs at the localized wavelength of slow light regions due to the Purcell effect. The enhanced emission peak wavelength was continuously shifted with the PC lattice constant. These results suggest that the PC-WG can be utilized to modify the spontaneous emission rate and carrier relaxation time of the embedded QD. This modification can be applied and useful for various QD-based optical devices as well as our proposed all-optical switching device based on PC-WG/QD.

Keywords

molecular beam epitaxy (MBE)nanostructureIII-V
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1438: Symposium M – Optical Interconnects—Materials, Performance and Applications , 2012 , mrss12-1438-m03-02
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

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