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Modelling the Dielectric Growth on Silicon Produced in a Nitrous Oxide Rtp Environment
Published online by Cambridge University Press: 21 February 2011
Abstract
The results of measurements of the physical properties of the dielectric grown on various orientations and surface doping concentration on silicon in an N2O environment are presented. We use this data to produce a model that predicts the dielectric thickness as a function of time and temperature.
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- Research Article
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- Copyright © Materials Research Society 1993
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