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Modelling Diffusion in and From Polysilicon Layers

Published online by Cambridge University Press:  21 February 2011

C. Hill  and
S.K. Jones
C. Hill
Affiliation:
Plessey Research Caswell, Towcester, Northamptonshire, England, NN12 8EQ.
S.K. Jones
Affiliation:
Plessey Research Caswell, Towcester, Northamptonshire, England, NN12 8EQ.
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Abstract

The physical processes involved in dopant redistribution during heat treatments of polysilicon layers are described, and one and two—dimensional models based on these are presented. The quantitative effects of the physical parameters determining arsenic andboron distributions in bipolar VLSI emitter—base structures are demonstrated, andclose correspondence shown with available experimental data. Areas needing new models are outlined, and an approach to the modelling of epitaxial alignment is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 129
Copyright
Copyright © Materials Research Society 1990

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