Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-25T15:17:25.871Z Has data issue: false hasContentIssue false

Modeling of Temperature Increase Due to Joule Heating During Electromigration Measurements

Published online by Cambridge University Press:  15 February 2011

H. C. Louie Liu
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
Get access

Abstract

Electromigration (EM), the mass transport phenomenon under applied electrical field, is known to cause degradation in interconnections and thus to compromise the devices' reliability. High current density and high temperature conditions are usually adopted to evaluate the EM lifetime. Such high current density will raise the temperature at the test sites because of Joule heating. Thus the actual temperature on the test surface, not the ambient temperature, is an important parameter affecting the lifetime of the metallization. A simple model is proposed here to predict the temperature rise in such interconnections and the calculated values agree well with the experimentally measured rise in temperature. Only heat conduction and convection are considered and illustrative equivalent electrical analogy technique is used to solve the problem. This model, using a commercially available spreadsheet and its iteration functions, is shown to match closely with experimental results.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. d'Heurle, F. M. and Ho, P. S., in ”Thin Films: Interdiffusion and Reaction”, ed. by Poate, J. M., Tu, K. N. and Mayer, J. W., Wiley-Interscience, New York, p. 243, 1978.Google Scholar
2. Black, J. R., Proc. of the IEEE, Vol.57, No. 9, p. 15871594, 1969.Google Scholar
3. Sato, K. et al, J. Electrochem. Soc., Vol.138, No. 9, p. 27742778, 1991.Google Scholar
4. Thompson, C. V. and Cho, J., IEEE Elec. Dev, Lett., EDL–7, No. 12, p. 667668, 1986.Google Scholar
5. Liu, H. C. Louie, Ph.D. Thesis, RPI, (1993).Google Scholar
6. White, F. M., Heat Transfer, Addison-Wesley, MA, 1984.Google Scholar
7. Fuji, T. and Imura, H., Int. J. Heat Mass Transfer, Vol.15, 1972, pp. 755767.Google Scholar
8. Tummala, R. R. and Rymaszewski, E. J., Microelectronics Packaging Handbook, Van Nostrand, NY, 1989.Google Scholar
9. Harper, C. A., Electronic Packaging and Interconnection Handbook, McGraw-Hill, NY, 1991.Google Scholar
10. David, R. F., IEEE Trans. Parts, Hybrids, Pack., Vol. PHP–13, No. 3, p. 283290, 1977.Google Scholar