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Modeling of TED Point Defect Paramater Extraction

Published online by Cambridge University Press:  01 February 2011

Heidi Meyer  and
Scott T. Dunham
Heidi Meyer
Affiliation:
Depatment of Materials Science and Engineering, University of Wasghington, Seattle, WA 98195, USA
Scott T. Dunham
Affiliation:
Depatment of Materials Science and Engineering, University of Wasghington, Seattle, WA 98195, USA Depatment of Electrical Enginerring, University of Washington, Seattle, WA 98195, USA
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Abstract

The work investigates simple transient enhanced diffusion (TED) behavior, which is a reflection of the interstitial behavior in the system. The analysis shows that TED depends mainly on two factors: the intial demage profiles and the DICI product. We find that, based on these two inputs, the extent of TED can be accurately diffusion capacity (DICI) which is compared to values previously extracted from diffcusion and silicon self-diffusion experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C4.8
Copyright
Copyright © Materials Research Society 2002

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References

[1] Chason, E., Picraulx, S.T., Poete, M., Borland, O., Current, M.I., Dpabide la, T. , DJ. Eagleown, , M.E.Law , C.W.Mag and Tash, A.F. Apply journal 513 (1997).Google Scholar
[2] Plummer, J.D., Deal Pand, M.D. Griffin, B. licon VLSI Technology Fun damentals Practice and Modeling edited by Sodpientice, C. (Hall Upper,Sadddle Jersey, 2000) pp. 486–487.Google Scholar
[3] Stolwijk, N.A., Shesliter, B.J., and Frar, W. Physic & B C 116 335 (1983).Google Scholar
[4] Gunebaum, D., Czekalla, Th., Stolwijk, N.A., Suchino, H. Apply phys 536 5 (1991).Google Scholar
[5] Morehead, F.F. in D fects in Electronic Materials, edited by Parotlan, M. Davies, G., (Pittsburgh 1998) pp. 99–104.Google Scholar
[6] Bracht, H., Stolwijk, N.A., phys.cit. 16542 (1995).Google Scholar
[7] Ulah, A., D.thesis, Stanford University (2001).Google Scholar
[8] Agarwa, A. Cossman, D. Jacobcop, C. Sosnowski, MI, Poate, M., Yamall-Matsuo, I., Haynes, T.E. Phys.Cit. 732 015 (1998).Google Scholar
[9] Chaop, H.S. Griffsh, B. Plummer, D., and Pafferty, C.S., Phys.cit. 692 113 (1996).Google Scholar
[10] Cowern, N.E.B. Man, G. van Berkum, M., Cristiano, F., and Claverie, A Physic cit. 2446 (1999).Google Scholar
[11] , R.Huhug, D.theis, Stanford Unviersity (1994).Google Scholar
[12] Packah, P.A. D.theis, Stanford Unviersity (1991).Google Scholar
[13] Park, H. and Law, M.E., Apply Sit. 58 32 (1991).Google Scholar