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Modeling of Diffusion and Activation of Low Energy Arsenic Implants in Silicon

Published online by Cambridge University Press:  01 February 2011

Srinivasan Chakravarthi ,
Chidambaram P.R. ,
Charles Machala ,
Amitabh Jain  and
Xin Zhang
Srinivasan Chakravarthi
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243.
Chidambaram P.R.
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243.
Charles Machala
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243.
Amitabh Jain
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243.
Xin Zhang
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243.
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Summary

In summary, we find it is possible to model the extent of arsenic diffusion during front-end and back-end processes that define the final junction depth. The key features of the model can be summarised as: (a) Interstitials from implant damage play a diminished role as implant energies are scaled; (b) As4V formation and precipitation at high concentrations is critical to accurate modeling of ultra-shallow arsenic junctions. These models when used with device simulations help optimize transistor performance/tradeoffs.

We would like to thank Pavel Fastenko and Scott T. Dunham (University of Washington) for details and discussion regarding their modeling results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C3.7
Copyright
Copyright © Materials Research Society 2002

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References

1 Agarwal, A., Gossmann, H.J., Eaglesham, D. J., Pelaz, L., Jacobson, D. C., Haynes, T. E., Erokhin, Y., in Appl. Phys. Lett. 71(21), 3141 (1997)Google Scholar
2 Kasnavi, R., Griffin, P. B., and Plummer, J. D., in Sim of Semicond. Proc. and Dev. Tech. Dig. (SISPAD '98), 48, 1998.Google Scholar
3T-SUPREM4 User's Manual, Avant! Corp. 2001.Google Scholar
4 Dunham, S. T., Chakravarthi, S., and Gencer, Alp H.. in IEDM, Technical Digest, 1998.Google Scholar
5 Nobili, D., Solmi, S., Parisini, A., Derdour, M., Armigliato, A. and Moro, L., in Phys. Rev. B49 (4) 2477 (1994).Google Scholar
6 Nobili, D. and Solmi, S. in J. Appl. Phys. 83 (5) 2481 (1998).Google Scholar
7 Berding, M., Sher, A., in Phys. Rev. B, 58 (7) 3853 (1998).Google Scholar
8 Ramamoorthy, M. and Pantelides, S., in Phys. Rev. Lett. 76 (25) 4753 (1996).Google Scholar
9 Dunham, S.T., Fastenko, P., Qin, Z. and Henkelman, G., in Proc. Of Int. Conf. On Modeling and Simulation of Microsystems (MSM-2001) (2001); P. Fastenko, S.T. Dunham and G. Henkelman in MRS Proceedings 669, 2001.Google Scholar