Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-27T02:05:50.105Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling and Simulation of the Influence of SOI Structure on Damage Evolution and Ultra-shallow Junction Formed by Ge Preamorphization Implants and Solid Phase Epitaxial Regrowth

Published online by Cambridge University Press:  01 February 2011

Caroline Mok ,
B. Colombeau ,
M. Jaraiz ,
P. Castrillo ,
J. E. Rubio ,
R. Pinacho ,
M. P. Srinivasan ,
F. Benistant ,
I. Martin-Bragado  and
J. J. Hamilton
Caroline Mok
Affiliation:
[email protected], National University of Singapore, Department of Chemical and Biomolecular Engineering, 4 Engineering Drive 4, Singapore, Singapore, 117576, Singapore
B. Colombeau
Affiliation:
[email protected], Chartered Semiconductor Manufacturing, Singapore, Singapore, 738406, Singapore
M. Jaraiz
Affiliation:
[email protected], University of Valladolid, Valladolid, Valladolid, 47011, Spain
P. Castrillo
Affiliation:
[email protected], University of Valladolid, Valladolid, Valladolid, 47011, Spain
J. E. Rubio
Affiliation:
[email protected], University of Valladolid, Valladolid, Valladolid, 47011, Spain
R. Pinacho
Affiliation:
[email protected], University of Valladolid, Valladolid, Valladolid, 47011, Spain
M. P. Srinivasan
Affiliation:
[email protected], National University of Singapore, Singapore, Singapore, 117576, Singapore
F. Benistant
Affiliation:
[email protected], Chartered Semiconductor Manufacturing, Singapore, Singapore, 738406, Singapore
I. Martin-Bragado
Affiliation:
[email protected], Synopsys, Mountain View, California, 94043, United States
J. J. Hamilton
Affiliation:
[email protected], University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom
Get access

Abstract

Preamorphization implant (PAI) prior to dopant implantation, followed by solid phase epitaxial regrowth (SPER) is of great interest due to its ability to form highly-activated ultra-shallow junctions. Coupled with growing interest in the use of silicon-on-insulator (SOI) wafers, modeling and simulating the influence of SOI structure on damage evolution and ultra-shallow junction formation is required. In this work, we use a kinetic Monte Carlo (kMC) simulator to model the different mechanisms involved in the process of ultra-shallow junction formation, including amorphization, recrystallization, defect interaction and evolution, as well as dopant-defect interaction in both bulk silicon and SOI. Simulation results of dopant concentration profiles and dopant activation are in good agreement with experimental data and can provide important insight for optimizing the process in bulk silicon and SOI.

Keywords

simulationSidefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C03-04
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lindsay, R., Severi, R., Pawlak, B. J., Henson, K., Lauwers, A., Pages, X., Satta, A., Surdeanu, R., Lendzian, H. and Maex, K., in The Fourth International Workshop on Junction Technology (IEEE, 2004), pp. 70–75.Google Scholar
2 Tsai, M. Y. and Streetman, B. G., J. Appl. Phys. 50, 183 (1979).Google Scholar
3 Saavedra, A. F., Jones, K. S., Law, M. E., Chan, K. K. and Jones, E. C., J. Appl. Phys. 96, 1891 (2004).Google Scholar
4 Pawlak, B. J., Surdeanu, R., Colombeau, B., Smith, A. J., Cowern, N. E. B., Lindsay, R., Vandervorst, W., Brijs, B., Richard, O. and Cristiano, F., Appl. Phys. Lett. 84, 2055 (2004).Google Scholar
5 Hamilton, J. J., Collart, E. J. H., Colombeau, B., Jeynes, C., Bersani, M., Giubertoni, D., Sharp, J. A., Cowern, N. E. B. and Kirkby, K. J., Nucl. Instrum. Methods Phys. Res., Sect. B 237, 107 (2005).Google Scholar
6 Colombeau, B., Smith, A. J., Cowern, N. E. B., Lerch, W., Paul, S., Pawlak, B. J., Cristiano, F., Hebras, X., Bolze, D., Ortiz, C. and Pichler, P., IEDM Tech. Digest (IEEE, 2004), pp. 971–974.Google Scholar
7 Aboy, M., Pelaz, L., Marques, L. A., Lopez, P., Barbolla, J., Duffy, R., Venezia, V. C. and Griffin, P. B., Appl. Phys. Lett. 86, 031908 (2005).Google Scholar
8 Mok, K. R. C., Jaraiz, M., Martin-Bragado, I., Rubio, J. E., Castrillo, P., Pinacho, R., Barbolla, J. and Srinivasan, M. P., J. Appl. Phys. 98, 046104 (2005).Google Scholar
9 Castrillo, P., Martin-Bragado, I., Pinacho, R., Jaraiz, M., Rubio, J. E., Mok, K. R. C., Miguel-Herrero, F. J. and Barbolla, J., Mat. Sci. Eng. B 124–125, 404 (2005).Google Scholar
10 Jaraiz, M., Castrillo, P., Pinacho, R., Martin-Bragado, I. and Barbolla, J., in Simulation of Semiconductor Processes and Devices 2001, edited by Tsoukalas, D. and Tsamis, C. (2001), pp. 10–17.Google Scholar
11 Robinson, M. T., Phys. Rev. B 40, 10717 (1989).Google Scholar
12 Mattoni, A. and Colombo, L., Phys. Rev. B 69, 045204 (2004).Google Scholar
13 Cristiano, F., Cherkashin, N., Calvo, P., Lamrani, Y., Hebras, X., Claverie, A., Lerch, W. and Paul, S., Mat. Sci. Eng. B 114–115, 174 (2004).Google Scholar
14 Chao, H. S., Griffin, P. B. and Plummer, J. D., in Mat. Res. Soc. Symp. Proc. Vol 469 (Mat. Res. Soc., 1997), pp. 347–352.Google Scholar
15 Caughey, D. M. and Thomas, R. E., Proc. IEEE 55, (1967), pp. 2192–2193.Google Scholar