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MO-CVD GaAs Grown by Direct Deposition on Si

Published online by Cambridge University Press:  28 February 2011

S. M. Vernon ,
S. J. Pearton ,
J. M. Gibson ,
R. Caruso ,
C. R. Abernathy ,
K. T. Short ,
Michael Stavola ,
V. E. Haven  and
D. C. Jacobson
S. M. Vernon
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. Caruso
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. T. Short
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Michael Stavola
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
V. E. Haven
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

GaAs layers were grown directly on misoriented (2° off (100)→[011]) Si substrates by Metalorganic Chemical Vapor Deposition. The threading dislocation density at the surface of 4 μm thick layers was typically 108cm−2, as determined by both preferential etching and transmission electron microscopy. Rapid thermal annealing (900°C, 10s) improved the crystalline quality of the GaAs near the heterointerface while allowing no detectable Si diffusion into this layer. Two deep electron traps were observed in the undoped GaAs, but were present at a low concentration (∼ 1013 cm−3 ). The (400) x-ray diffraction peak width from the GaAs was significantly reduced with increasing GaAs layer thickness, indicating improved material quality. This is supported by Si implant activation data, which shows higher net donor activity in thicker layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 187
Copyright
Copyright © Materials Research Society 1987

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