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MOCVD Behaviors of Two-Sized InGaAs Ordered Nano-Bar Arrays Grown Selectively on a GaAs Substrate

Published online by Cambridge University Press:  01 February 2011

Benzhong Wang  and
Soo-Jin Chua
Benzhong Wang
Affiliation:
[email protected], Institute of Materials Research and Engineering, OES, 3 Research Link, Singapore, 117602, Singapore
Soo-Jin Chua
Affiliation:
[email protected], Institute of Materials Research and Engineering, OES, Singapore, 117602, Singapore
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Abstract

Nanosphere lithography was used to form a nano-scaled SiO2 template on a GaAs substrate. Especially, a simple method for fabricating nanopatterns with multi feature sizes within one step has been invented. These nanopatterns, as a template, can be used to grow selectively ordered nanostructures arrays such as quantum dots, quantum bars with different feature sizes in one step. Two sized In0.25Ga0.75As nano-bar arrays have been successfully grown on a GaAs substrate by MOCVD.

Keywords

nanostructureIII-Vself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1017 , 2007 , 1017-DD11-12
Copyright
Copyright © Materials Research Society 2007

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References

1. Birudavolu, S., Nuntawong, N., Balakrishnan, G., Xin, Y. C., Huang, S., Lee, S. C., Brueck, S. R. J., Hains, C. P., and Huffaker, D. L., Appl. Phys. Lett. 85, 2337 (2004)Google Scholar
2. Li, R. R., Dapkus, P. D., Thompson, M. E., and Jeong, W. G. Harrison, C., Chaikin, P. M., Register, R. A., Adamson, D. H., Appl. Phys. Lett. 76, 1689 (2000)Google Scholar
3. Fuster, David, Martínez-Pastor, Juan, González, Luisa and González, Yolanda, Phys. Rev. B 71, 205329 (2005)Google Scholar
4. Yablonovitch, E., Phys. Rev. Lett. 58, 2059 (1987).Google Scholar
5. John, S., Phys. Rev. Lett. 58, 2486 (1987)Google Scholar
6. Erchak, A. A., Ripin, D. J., Fan, S., Rakich, P., Petrich, G. S., Kolodziejski, L. A., Ippen, E. P., and Joannopoulos, J. D., Appl. Phys. Lett. 78, 563 (2001).Google Scholar