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Mixed Abrasive CMP: A Study on Metal and Dielectric Films

Published online by Cambridge University Press:  01 February 2011

Anurag Jindal ,
Sharath Hegde  and
S.V. Babu
Anurag Jindal
Affiliation:
Department of Chemical Engineering and Center for Advanced Materials Processing Clarkson University, Potsdam, NY-13699
Sharath Hegde
Affiliation:
Department of Chemical Engineering and Center for Advanced Materials Processing Clarkson University, Potsdam, NY-13699
S.V. Babu
Affiliation:
Department of Chemical Engineering and Center for Advanced Materials Processing Clarkson University, Potsdam, NY-13699
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Abstract

Mixed abrasive slurries (MAS) containing alumina/silica and alumina/ceria abrasives were evaluated for CMP of metal and dielectric films, respectively. MAS with 0.5wt% calcined alumina and 2.5wt% silica (fumed and colloidal) abrasives were highly selective to tantalum polishing over copper and oxide. Similarly, MAS containing 1.5wt% calcined alumina and 3wt% colloidal ceria particles offered a polish rate selectivity between silicon dioxide and silicon nitride films of more than 30, without any additives, without compromising finished surface quality. This improved performance appears to be a result of modified surface morphology as well as synergistic interactions between the chemical activity of silica or ceria and the hardness of the alumina.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 732: Symposium I – Chemical-Mechanical Planarization , 2002 , I3.6
Copyright
Copyright © Materials Research Society 2002

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References

1. Hocheng, H., Tsai, H.Y., and Su, Y.T., J. Electrochem Soc., 148 (10), pp. G581–586 (2001).Google Scholar
2. Fayolle, M., and Romagna, F., Microelectronic Engineering, 37/38, pp. 135–141 (1997).Google Scholar
3. Wrschka, P., Hernandez, J., Oehrlein, G.S., Negrych, J.A., Haag, G., Rau, P., and Currie, J.E., J. Electrochem. Soc., 148 (6), pp. G321–G325 (2001).Google Scholar
4. Wang, Y. -L., Liu, C., Feng, M.-S., Dun, J. and Chou, K.-S., Thin Solid Films, 308-309, pp. 543–549 (1997).Google Scholar
5. Lee, J.W., Yoon, B. U., Hah, S., and Moon, J.T., Proc. Mat. Res. Soc., Vol. 671 (2001)Google Scholar
6. Jindal, A., Hegde, S., Babu, S.V., USPTO Patent Application, September (2001).Google Scholar
7. Ramarajan, S., Hariharaputhiran, M., Her, Y.-S., and Babu, S.V., Surf. Engg., 15, pp. 324–328 (1999).Google Scholar
8. Smekalin, K., Solid State Technology, pp. 187–194 (197).Google Scholar
9. Jindal, A., Hegde, S., and Babu, S.V., Electrochem. and Solid State Letters, 5, G48 (2002)Google Scholar
10. Jindal, A., Hegde, S., and Babu, S.V., submitted for publication in J. Electrochem. Soc., April (2002).Google Scholar