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Microstructure Characterization of Amorphous Silicon Films by Effusion Measurements of Implanted Helium

Published online by Cambridge University Press:  17 June 2013

W. Beyer ,
W. Hilgers ,
D. Lennartz ,
F.C. Maier ,
N.H. Nickel ,
F. Pennartz  and
P. Prunici
W. Beyer
Affiliation:
Institut für Silizium-Photovoltaik, Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstrasse 5, D-12489 Berlin, Germany IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany Malibu GmbH & Co.KG, Böttcherstrasse 7, D-33609, Bielefeld, Germany
W. Hilgers
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
D. Lennartz
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
F.C. Maier
Affiliation:
Malibu GmbH & Co.KG, Böttcherstrasse 7, D-33609, Bielefeld, Germany
N.H. Nickel
Affiliation:
Institut für Silizium-Photovoltaik, Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstrasse 5, D-12489 Berlin, Germany
F. Pennartz
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
P. Prunici
Affiliation:
Malibu GmbH & Co.KG, Böttcherstrasse 7, D-33609, Bielefeld, Germany
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Abstract

An important property of thin film silicon and related materials is the microstructure which may involve the presence of interconnected and isolated voids. We report on effusion measurements of implanted helium (He) to detect such voids. Several series of hydrogenated and unhydrogenated amorphous silicon films prepared by the methods of plasma deposition, hot wire deposition and vacuum evaporation were investigated. The results show common features like a He effusion peak at low temperatures attributed to He out-diffusion through a compact material or through interconnected voids, and a He effusion peak at high temperatures attributed to He trapped in isolated voids. While undoped plasma-grown device-grade hydrogenated amorphous silicon (a-Si:H) films show a rather low concentration of such isolated voids, its concentration can be rather high in doped a-Si:H, in unhydrogenated evaporated material and others.

Keywords

Sithin filmmicrostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1536: Symposium A – Film Silicon Science and Technology , 2013 , pp. 175 - 180
Copyright
Copyright © Materials Research Society 2013 

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References

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