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Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope.

Published online by Cambridge University Press:  11 July 2011

K. Kinoshita ,
T. Yoda  and
S. Kishida
K. Kinoshita
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori University Electronic Display Research Center, 522-2 Koyama-Kita, Tottori 680-0941, Japan.
T. Yoda
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
S. Kishida
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori University Electronic Display Research Center, 522-2 Koyama-Kita, Tottori 680-0941, Japan.
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Abstract

Conductive atomic-force microscopy (C-AFM) writing is attracting attention as a technique for clarifying the switching mechanism of resistive random-access memory (ReRAM) by providing a wide area filled with filaments, which can be regarded as one filament with large radius. We observed a C-AFM writing area of NiO films using SEM, and revealed a correlation between the contrast in a secondary electron image (SEI) and the resistance written by C-AFM. In addition, the dependence of the SEI contrast on the beam accelerating voltage (Vaccel) suggests that the resistance-change effect occurs near the surface of the NiO film. As for the effect of electron irradiation on the C-AFM writing area, it was shown that the resistance change effect was caused by exchanging oxygen with the atmosphere at the surface of the NiO film. This result suggests that the low resistance and high resistance areas are, respectively, p-type Ni1+δO (δ < 0) and insulating (stoichiometric) or n-type Ni1+δO (δ ≥ 0).

Keywords

memoryscanning electron microscopy (SEM)scanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1337: Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories , 2011 , mrss11-1337-q08-11
Copyright
Copyright © Materials Research Society 2011

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References

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