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Mechanistic Understanding of Material Detachment During CMP Processing

Published online by Cambridge University Press:  01 February 2011

Wei Che ,
Yongjin Guo ,
Ashraf Bastawros  and
Abhijit Chandra
Wei Che
Affiliation:
Dept. of Mechanical Engineering, Iowa State University, Ames, IA 50011
Yongjin Guo
Affiliation:
Dept. of Mechanical Engineering, Iowa State University, Ames, IA 50011
Ashraf Bastawros
Affiliation:
Dept. of Aerospace Engineering and Mechanics, Iowa State University, Ames, IA 50011
Abhijit Chandra
Affiliation:
Dept. of Mechanical Engineering, Iowa State University, Ames, IA 50011
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Abstract

A combined experimental and numerical approach has been devised to understand the abrasion aspects of material removal mechanisms of ductile copper film on silicon wafers during Chemical mechanical planarization. The experimentally observed trends of the deformation patterns and the force profiles from micro and nano-single scratch experiments are used to guide numerical simulation using finite element simulation at the continuum scale and molecular dynamics simulation at the atomistic scale. Such integrated approach has provided several plausible mechanisms for material detachments through a combination of surface plowing and shearing under the abrasive particles. The gained insights can be integrated into mechanismbased models for the material removal rate in these processes as well as addressing possible defect formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 732: Symposium I – Chemical-Mechanical Planarization , 2002 , I4.3
Copyright
Copyright © Materials Research Society 2002

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