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Mechanisms of Inelastic Deformation and Stress Relaxation in Thin Metallizations Bonded to Hard Substrates

Published online by Cambridge University Press:  15 February 2011

M. A. Korhonen ,
P. Brørgesen  and
Che-Yu Li
M. A. Korhonen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY 14853
P. Brørgesen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY 14853
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Abstract

The yield strength of metallic thin films bonded to hard substrates can be significantly higher than is customary for bulk samples of the same metal. This is related to the constrained nature of the deformation. The constrained deformation, as well as the commonly observed crystallographic texture of thin films, places restrictive conditions on the mechanisms of deformation that produce stress relaxation. In narrow aluminum based metallizations used as interconnects in large scale integrated circuits thermal stress induced voiding provides an effective means for stress relaxation. For these interconnects, the stress state is tensile after excursions to higher temperatures; the stresses relax mainly by dislocation glide and grain boundary sliding during the cooldown, while the longer term relaxation is governed by stress-induced voiding and dislocation creep.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 133
Copyright
Copyright © Materials Research Society 1991

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References

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